THEORETICAL INVESTIGATION OF ELEMENTARY PROCESSES DURING EPITAXIAL GROWTH

TM Department
A.Yu.Kaminski      R.A.Suris     A. M. Boiko
A.F.Ioffe Physico-Technical Intitute,
Russian Academy of Sciences,
St.Petersburg 194021, Russia

E-mail:   suris@theory.ioffe.rssi.ru
Publications with abstracts

We investigate the processes of heteroboundary formation during epitaxial growth. Theoretical analysis and computer simulation of elementary processes of the crystal surface growth by molecular-beam epitaxy (MBE) are carried out. Time evolution equations for 2D islands and "holes" on a surface during growth and its interruption are obtained. The function of 2D island size distribution is found to keep the "memory" of its initial shape during MBE. A program for computer stimulation (by Monte-Carlo method) of island formation, growth and coalescence in the epitaxial growth of the vicinal surfaces close to (100) has been devised, having regard to anisotropy of adatom diffusion and directionality of chemical bonds.

[1] 2D Nuclei Evolution During Epitaxial Growth, A.Yu.Kaminskii,
   R.A.Suris, Solid State Commun., v.8, p.609 (1994).

[2] The Evolution of 2D Nuclei During Epitaxial Growth, A.Yu.Kaminskii,
   R.A.Suris, Superlattices and Microstructures, v.16, p.221 (1994).

[3] The Evolution of 2D Nuclei During Epitaxial Growth, A.Yu.Kaminskii,
   R.A.Suris, 7th Int. Conf. Superlatt., Microst. and Microdevices
   (Banff, Canada, 1994).

[4] The Evolution of 2D Nuclei During Epitaxial Growth, A.Yu.Kaminskii,
   R.A.Suris, Int. Symposium "Nanostructures: Physics and Technology",
   (St.Petersburg, Russia, 1994).

[5] Smoothing of Crystal Surfaces during Growth Interruption, A.Yu.Kaminski,
   R.A.Suris, 5th International Conference on Formation of Semiconductor
   Interfaces, (Princeton, USA, 1995).

[6] Role of Adatom Diffusion along Steps in Step Stabilization: Monte-Carlo
    Modelling,
    A.M.Boiko, A.Yu.Kaminski, R.A.Suris, Int. Symposium "Nanostructures:
    Physics and Technology", (St.Petersburg, Russia, 1995).

[7] Evolution of Crystal Surfaces during Molecular-Beam Epitaxy,
    A.Yu.Kaminski, R.A.Suris, 2nd Russian Conference of Semiconductor
    Physics, (St. Petersburg, Russia, 1996) (invited).
 


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