2.1. 02-02-17610
2.2. Suris Robert Arnol'dovich
2.3. Theoretical investigations of the electronic and
     optical phenomena in semiconductor nanostructures and
     elementary atomic processes in their fabrication.
2.4. 2002
2.5. 2
2.6. The electron and hole spectrum and wave functions of a
     broken-gap InAs/GaSb heterojunction affected by tilted
     magnetic field have been calculated. Consideration of
     the lateral component of the magnetic field allows
     explaination  of suppression of the cyclotron
     resonance lines splitting that was observed in
     experiment.

     The dependence of the binding energy  and wave
     function fitting parameters of the positively charged
     trion in the system of two quantum wells with
     spatially separated charges has been obtained. The
     analytical estimation for the binding energy of the
     system consisting of an exciton and an electron in
     neighboring quantum wells has been performed in the
     limit of large distances between the quantum wells.
     The nature of the sharp pike in the light absorption
     in the vicinity of the frequency corresponding to the
     trion creation in the quantum well with the electron
     gas has been explained.

     Phase relaxation rate between lazing levels due to
     interaction with optical phonons has been found, which
     determines material gain of cascade laser, based on
     quantum dot superlattice. The conditions of a strong
     inverse population in each quantum dot have been
     revealed.

     Dependences of the intraband hole-hole and electron-
     electron relaxation time on temperature and the
     carrier concentration in quantum wells have been
     calculated with account for 2D screening. The effects
     of the processes on the threshold characteristics of
     the quantum well lasers have been estimated.

     The special computer program for simulation of
     smearing of the P-doped delta-layer formed by neutron
     irradiation of the isotope-modulated
     ^{28}Si/^{30}Si:^{31}P/^{28}Si heterostructure has been 
     developed and verified.

     The structure of the [11] step on the surface of  the
     Kossel crystal has been  shown to be governed  by
     interaction between second nearest neighbors. This
     interaction being repulsive, the step consists of [10]
     and [01] segments. The average size of this segments
     growth exponentially with temperature decrease.
    

2.7. Ioffe Physico-Technical Institute of The Russian
     Academy of Siences


Project leader                               Suris R.A.