9.00 - 10.30   Session 7 "III-Nitride heterostructures"

Session Chair: Fabrice Semond

9.00 - 9.30   We-1i
"Molecular beam epitaxy of polar/semipolar/nonpolar GaN/AlGaN heterostructures for intersubband devices"
(invited)
Caroline B. Lim, A. Ajay, D. A. Browne, C. Bougerol, E. Bellet-Amalric, and E. Monroy
CEA Greanoble, France

Abstract

9.30 - 9.45   We-1o
"Plasma-assisted MBE of AlGaN layers and QW structures for high efficiency sub-300-nm emitters"

V.N. Jmerik, D.V. Nechaev, A.A.Toropov, E.A. Evropeitsev, E.V. Lutsenko, M.V. Rzheutkski, S. Rouvimov, V.I. Kozlovsky, X. Rong, X.Q. Wang, S.V.Ivanov
Ioffe Institute, Russia

Abstract

9.45 - 10.00   We-2o
"Kinetic mechanisms of RF-MBE epitaxy of InGaN(0001) alloys across the entire ternary composition range"

E. Papadomanolaki, S. Kazazis, L. Lymperakis, E. Iliopoulos
University of Crete, Greece

Abstract

10.00 - 10.15   We-3o
"Low dislocation density and high mobility GaN based HEMT heterostructures grown by plasma-assisted and high temperature ammonia MBE with Ga as surfactant"

S. Petrov, A.N. Alexeev, D.M. Krasovitsky, V.P. Chaly, V.V. Mamaev
Semiteq JSC, Russia

Abstract

10.15 - 10.30   We-4o
"Pseudomophic growth of GaN on AlN single crystal and template substrates by NH3-MBE"

P. Sohi, S. Tamariz, D. Martin, N. Grandjean
EPFL, Switzerland

Abstract