This letter is to remind you that the 25th International
Conference on Defects in Semiconductors (ICDS-25) will be held in July 20-24, 2009 in
St Petersburg, Russia.
For detailed information please visit conference site
The scope of ICDS-25 covers basic and applied research on point
and extended defects, shallow and deep impurities (including magnetic impurities) in bulk
materials, in low-dimensional structures, nanoscale structures, and oxide layers as well at
interfaces. Materials of current interest include the group-IV semiconductors and their alloys,
II-V and II-VI compound semiconductors, III nitrides and alloys, organic and magnetic
The Conference programme will comprise invited talks and
contributed papers. The latter ones should be earlier unpublished works that either have
been completed or are at their final stages.
A number of distinguished scientists from all over the world will
present invited talks on recent progress in various key areas of defects in semiconductor
materials and structures.
A partial list of invited speakers who have confirmed their participation so far is given
in the Conference site.
Several invited speakers will be selected by the International Programme Committee from
the accepted abstracts.
The requirements for abstract submission, including invited talks
and abstracts for the Corbett Award, can be found in section Abstract Submission in the
The deadline for abstract submission is March 2, 2009.