Second Announcement

This letter is to remind you that the 25th International Conference on Defects in Semiconductors (ICDS-25) will be held in July 20-24, 2009 in St Petersburg, Russia. For detailed information please visit conference site

The scope of ICDS-25 covers basic and applied research on point and extended defects, shallow and deep impurities (including magnetic impurities) in bulk materials, in low-dimensional structures, nanoscale structures, and oxide layers as well at interfaces. Materials of current interest include the group-IV semiconductors and their alloys, II-V and II-VI compound semiconductors, III nitrides and alloys, organic and magnetic semiconductors.

The Conference programme will comprise invited talks and contributed papers. The latter ones should be earlier unpublished works that either have been completed or are at their final stages.

A number of distinguished scientists from all over the world will present invited talks on recent progress in various key areas of defects in semiconductor materials and structures. A partial list of invited speakers who have confirmed their participation so far is given in the Conference site. Several invited speakers will be selected by the International Programme Committee from the accepted abstracts.

The requirements for abstract submission, including invited talks and abstracts for the Corbett Award, can be found in section Abstract Submission in the Conference site. The deadline for abstract submission is March 2, 2009.

(c) 2007-2009, Ioffe Institute, ICDS-25