Invited talks

A partial list of invited speakers who have confirmed their participation so far is given below. The tentative titles of invited talks are also announced.
Joel W Ager Lawrence Berkeley National Laboratory, Berkeley, CA, USA
Dealing with defects in indium nitride
Hartmut Bracht University of Muenster, Muenster, Germany
Scientific and technological issues of atomic transport in silicon-germanium alloys
Leonard Brillson 205 Dreese Lab, Columbus, OH, USA
Massive point defect redistribution near semiconductor surfaces and interfaces and its impact on Schottky barrier formation
Laurie Calvet University of Paris Sud XI, Paris, France
Transport spectroscopy of single defects in silicon
Alexandra Carvalho EPFL, Lausanne, Switzerland
Progress towards understanding self-interstitial defects in Ge
Jose Coutinho Aveiro University, Aveiro, Portugal
Surface segregation of dopants in nano-crystalline silicon: density-functional studies
Gordon Davies King's College, London, UK
Strange lifetimes of the vibrations of interstitial oxygen in SiGe alloys
Leszek Dobaczewski Institute of Physics, Warsaw, Poland
Energy state distributions at oxide-semiconductor interfaces investigated by Laplace DLTS
Stefan Estreicher Texas Tech University, Lubbock, TX, USA
Non-equilibrium molecular dynamics for impurities in semiconductors: vibrational lifetimes and thermal conductivities
Minoru Fujii Kobe University, Kobe, Japan
Impurity doping in Si nanowires and nanocrystals
Maria Ganchenkova Helsinki University of Technology, Espoo, Finland
Simulations of defects and defect microstucture evolution in GaN-based alloys
Wolfgang Gehlhoff Technical University, Berlin, Germany
EPR identification of intrinsic and transition metal-related defects in II-IV-V2 compounds
Kohei Itoh Keio University, Yokohama, Japan
Quantum coherence and manipulation of phosphorus electron and nuclear spin states in silicon
Anderson Janotti University of California, Santa Barbara, CA, USA
Oxygen vacancies in oxides
Tsunenobu Kimoto Kyoto University, Kyoto, Japan
Point and extended defects in SiC and their impact on modern technological processes
Edward Lavrov Technical University of Dresden, Dresden, Germany
Hydrogen in ZnO
Bo Monemar Linköping University, Linköping, Sweden
Optical properties of Mg-doped GaN
Kai Nordlund University of Helsinki, Helsinki, Finland
On the threshold energy of atomic displacement in Si
Michael Stavola Lehigh University, Lehigh, PA, USA
Hydrogen in multi-crystalline silicon solar cells
Satoru Suzuki NTT Basic Research Laboratories, Kanagava, Japan
Defect engineering in single-walled carbon nanotubes
Leonid Vlasenko Ioffe Institute, St Petersburg, Russia
Point defects in ZnO: Electron paramagnetic resonance study

(c) 2007-2009, Ioffe Institute, ICDS-25