A partial list of invited speakers who have confirmed
their participation so far is given below. The tentative
titles of invited talks are also announced.
Joel W Ager |
Lawrence Berkeley National Laboratory, Berkeley, CA, USA
|
Dealing with defects in indium nitride
|
|
Hartmut Bracht |
University of Muenster, Muenster, Germany
|
Scientific and technological issues of atomic transport in silicon-germanium alloys
|
|
Leonard Brillson |
205 Dreese Lab, Columbus, OH, USA
|
Massive point defect redistribution near semiconductor surfaces and interfaces and its impact on Schottky barrier formation
|
|
Laurie Calvet |
University of Paris Sud XI, Paris, France
|
Transport spectroscopy of single defects in silicon
|
|
Alexandra Carvalho |
EPFL, Lausanne, Switzerland
|
Progress towards understanding self-interstitial defects in Ge
|
|
Jose Coutinho |
Aveiro University, Aveiro, Portugal
|
Surface segregation of dopants in nano-crystalline silicon: density-functional studies
|
|
Gordon Davies |
King's College, London, UK
|
Strange lifetimes of the vibrations of interstitial oxygen in SiGe alloys
|
|
Leszek Dobaczewski |
Institute of Physics, Warsaw, Poland
|
Energy state distributions at oxide-semiconductor interfaces investigated by Laplace DLTS
|
|
Stefan Estreicher |
Texas Tech University, Lubbock, TX, USA
|
Non-equilibrium molecular dynamics for impurities in semiconductors: vibrational lifetimes and thermal conductivities
|
|
Minoru Fujii |
Kobe University, Kobe, Japan
|
Impurity doping in Si nanowires and nanocrystals
|
|
Maria Ganchenkova |
Helsinki University of Technology, Espoo, Finland
|
Simulations of defects and defect microstucture evolution in GaN-based alloys
|
|
Wolfgang Gehlhoff |
Technical University, Berlin, Germany
|
EPR identification of intrinsic and transition metal-related defects in II-IV-V2 compounds
|
|
Kohei Itoh |
Keio University, Yokohama, Japan
|
Quantum coherence and manipulation of
phosphorus electron and nuclear spin states in silicon
|
|
Anderson Janotti |
University of California, Santa Barbara, CA, USA
|
Oxygen vacancies in oxides
|
|
Tsunenobu Kimoto |
Kyoto University, Kyoto, Japan
|
Point and extended defects in SiC and their impact on modern technological processes
|
|
Edward Lavrov |
Technical University of Dresden, Dresden, Germany
|
Hydrogen in ZnO
|
|
Bo Monemar |
Linköping University, Linköping, Sweden
|
Optical properties of Mg-doped GaN
|
|
Kai Nordlund |
University of Helsinki, Helsinki, Finland
|
On the threshold energy of atomic displacement in Si
|
|
Michael Stavola |
Lehigh University, Lehigh, PA, USA
|
Hydrogen in multi-crystalline silicon solar cells
|
|
Satoru Suzuki |
NTT Basic Research Laboratories, Kanagava, Japan
|
Defect engineering in single-walled carbon nanotubes
|
|
Leonid Vlasenko |
Ioffe Institute, St Petersburg, Russia
|
Point defects in ZnO: Electron paramagnetic resonance study
|
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