Optoelectronic Phenomena in Heterostructures Laboratory

Research areas:

• Research of electrical and photoelectrical processes in abrupt and graded heterostructures and development of new devices for super-fast electronics, optoelectronics and pulse technique on their basis.
• Development of technology of undoped epitaxial layers and creation High-Voltage p-n junctions.
• Investigation of semiconductor quantum dots in glasses by optical spectroscopy (Raman scattering, absorption, photoluminescence).

Main semiconductor materials:

• GaAs-AlGaAs
• GaAs-InGaAs
• InP-InGaAsP
• GaP-InGaP

Production:

• High-Voltage Super Fast Gallium Arsenide Pulse Switches and Modulators.
• Super Fast p-i-n diodes on the base of GaAs.
• Picosecond p-i-n photodiodes on the wavelength 1.0 - 1.6 micron on the base of undoped InP and InGaAsP layers.

Laboratory Staff:

• 11 researches, including 1 Doctor of Sciences and 9 Candidates (Ph.D.).

Laboratory Head:

• Prof. V.I. Korol`kov, Lenin Prize winner
  Tel: +7 (812) 247-99-31
  Fax: +7 (812) 247-59-11
  E-mail: Vladimir.Korolkov@mail.ioffe.ru or Korolkov@argot.ioffe.rssi.ru

Business Address:

• A.F. Ioffe Physico-Technical Institute,
  26 Politekhnicheskaya Street,
  St.-Petersburg, Russia, 194021