InGaAsP/InP

Input relaxation time  to x10-13(s)   &   Quantum Well width  a (A)
t = x10-13(s),     a = (A)

Gain coefficient gomax(T, n),   where T - temperature (K),   n2D - Sheet carrier density (cm-2)

mc = 0.041 mo
mh = 0.5 mo
Eg = 0.83 eV (where T = 300K)
DEc = 0.162 eV
DEv = 0.253 eV
Dso = 0.321 eV
eo = 12.35