Energy gap 
x<0.45 1.424+1.247x eV x>0.45 1.9+0.125x+0.143x^{2} 
Energy separation (E_{ΓL}) between Γ and L valleys  0.29 eV 
Energy separation (E_{Γ}) between Γ and top of valence band  1.424+1.155x+0.37x^{2} eV 
Energy separation (E_{X}) between Xvalley and top of valence band  1.9+0.124x+0.144x^{2} eV 
Energy separation (E_{L}) between Lvalley and top of valence band  1.71+0.69x eV 
Energy spinorbital splitting  0.340.04x eV 
Intrinsic carrier concentration 
x=0.1 2.1·10^{5} cm^{3} x=0.3 2.1·10^{3} cm^{3} x=0.5 2.5·10^{2} cm^{3} x=0.8 4.3·10^{1} cm^{3} 
Intrinsic resistivity 
x=0.1 4·10^{9} Ω·cm x=0.3 1·10^{12} Ω·cm x=0.5 1·10^{14} Ω·cm x=0.8 5·10^{14} Ω·cm 
Effective conduction band density of states 
x<0.41 2.5·10^{19}·(0.063+0.083x)^{3/2} cm^{3} x>0.45 2.5·10^{19}·(0.850.14x)^{3/2} cm^{3} 
Effective valence band density of states  2.5·10^{19}·(0.51+0.25x)^{3/2} cm^{3} 
Band structure Al_{x}Ga_{1x} for x<0.410.45. Important minima of the condition band and maxima of the valence band 
Band structure Al_{x}Ga_{1x} for x>0.45. Important minima of the condition band and maxima of the valence band 
Energy separation between Γ, X, and L conduction band minima and top of the valence band versus composition. Crossover points:

Ratio of the total carrier concentration to the carrier concentration in Γvalley as a function of equilibrium carrier concentration at 300K (Zarem et al. [1989]). 
E_{Γ}=E_{Γ}(0)5.41·10^{4}·T^{2}/(T+204) (eV)
where E_{Γ}(0)=1.519+1.155x+0.37x^{2} (eV)
E_{X}=E_{X}(0)4.6·10^{4}·T^{2}/(T+204) (eV)
where E_{X}(0)=1.981+0.124x+0.144x^{2} (eV)E_{L}=E_{L}(0)6.05·10^{4}·T^{2}/(T+204) (eV)
where E_{L}(0)=1.815+0.0.69x (eV)Temperature dependence of the energy difference between the top of the valence band and the bottom of the Lvalley of the conduction band
E_{L}=1.8156.05·10^{4}·T^{2}/(T+204) (eV)
Temperature dependence of the energy difference between the top of the valence band and the bottom of the Xvalley of the conduction band
E_{L}=1.9814.60·10^{4}·T^{2}/(T+204) (eV)
Effective density of states in the conduction band versus x. (Calculated) 
Effective density of states in the conduction band versus x. (Calculated) 
n_{i} = (N_{c}·N_{v})^{1/2}exp[E_{g}/(2k_{b}T)]
The temperature dependences of the intrinsic carrier concentration. 1. x=0 2. x=0.3 3. x=0.6 4. x=1 
Pressure dependence of the ΓX crossover. 300 K (Saxena [1980]) 
Energy gap narrowing versus donor(curve 1) and acceptor (curve 2) doping density for GaAs (x=0). Experimental points for pGaAs are taken from four different papers (Jain and Roulston [1991]) 
Energy gap narrowing versus donor (curve 1) and acceptor (curve 2)doping density for AlAs (x=1). The curvesare calculated according (Jain et al. [1990]) 
Energy gap narrowing versus donor(curve 1) and acceptor (curve 2) doping density for GaAs (x=0). Experimental points for pGaAs are taken from four different papers (Jain and Roulston [1991]) 