AlGaAs - Aluminium Gallium Arsenide

Two-dimensional electron and hole gas mobility at AlxGa1-xAs/GaAs interface

Temperature dependences of the electron Hall mobility in the modulation-doped two-dimensional gas.
(Pfeiffer et al. (1989)).
Dependences of electron mobility versus surface carrier density 2D electron gas in the modulation-doped two-dimensional gas.
(Pfeiffer et al. (1989)).
Dependences of surface electron density (Curve 1) and mobility (Curve 2) versus undoped spacer thickness. T=4 K.
(Harris et al. (1987)).
Electron mobility in 2D-electron gas versus Al fraction x at three different temperatures.
(Drummond et al. (1982)).
Hole mobility in 2D-hole gas versus temperature.
Solid line shows theoretical calculation.
Points show experimental data for hole surface density 2·1011 cm-2
(Walukiewicz (1996)).