InN - Indium Nitride

Basic Parameters


    Remarks Referens
Crystal structure Wurtzite  
Group of symmetry C46v-P63mc    
Number of atoms in 1 cm3 9.58·1022    
Debye temperature 1150 K    
Melting point 3273 K   MacChesney et al. (1970)
Density 3.255 g cm-3
3.23 g cm-3
X-ray
 
Slack (1973)
Goldberg (2001)
Dielectric constant (static) 9.14 300 K, reflectivity Collins et al. (1967)
8.5 300 K Goldberg (2001)
Dielectric constant (high frequency) 4.84
4.6
4.77
300 K, reflectivity
300 K
 
Collins et al. (1967)
Goldberg (2001)
Infrared refractive index 2.1 - 2.2 300 K, Epitaxial films and monocrystals Meng, (1994)
1.9 - 2.1 300 K, Polycrystalline films
1.8 - 1.9 300 K, Amorphous films
Effective electron mass me 0.4 mo 300 K Xu and Ching (1993)
Effective hole masses (heavy)
   for kz direction mhz
   for kx direction mhx

3.53 mo
10.42 mo

300 K
Suzuki & Uenoyama (1996)
Effective hole masses (light)
   for kz direction mlz
   for kx direction mlx

3.53 mo
0.24 mo

300 K

Effective hole masses (split-off band)
   for kz direction msoz
   for kx direction msox

0.25mo
3.81mo

300 K

Effective mass of density of state mv:   7.26mo 300 K
Electron affinity 0.6 eV 300 K Goldberg (2001)
Lattice constant, a 3.11(1) A  300 K; X-ray diffraction on ultrafine powder Iwama, et al. (1971);
Qian et al. (1996)
 

3.112 A 

300 K Goldberg (2001)
Lattice constant, c 4.98(1) A 300 K; X-ray diffraction on ultrafine powder Iwama, et al. (1971)
  4.982 A 300 K Goldberg (2001)
  4.979 A 300 K Qian et al. (1996)
Thermal diffusivity
1.47 cm2 s-1    
Thermal conductivity 2.85 W cm-1 °C -1
300 K. experiment Slack et al. (1987)
Thermal expansion coefficient, linear αort = αc = 5.27 x10-6 K-1 T=20...800 °C. X-ray, epitaxial layers Sirota & Golodushko (1974)
also see Qian et al. (1996)

α|| = αa =4.15 x10-6 K-1
Radiative recombination coefficient
0.4 x 10-10 cm-1 s-1 300 K  
Optical phonon energy 99.2 meV 300 K