AlN - Inllium Nitride

Electrical properties

Basic Parameter

Wurtzite crystal structure
Breakdown field 1.2 ÷ 1.8 x 106 V cm-1 300 K
Mobility electrons 300 cm2 V-1 s-1 300 K
Mobility holes 14 cm2 V-1 s-1 300 K
Diffusion coefficient electrons 7 cm2 s-1 300 K
Diffusion coefficient holes 0.3 cm2 s-1 300 K
Electron thermal velocity 1.85 x 105 m s-1 300 K
Hole thermal velocity 0.41 x 105 m s-1 300 K
Conductivity σ 10-3 ÷ 10-5 Ω-1 cm-1 290 K ;
doped (Al2OC) single p-type crystals (blue)
Edwards et al. (1965)
10-11 ÷ 10-13 Ω-1 cm-1 300 K ;
undoped single crystals (colorless or pale yellow)
see also Conductivity vs. reciprocal temperature.
 
Electron drift mobility μn ~= 300 cm2 V-1 s-1 300 K ; calculated Chin et al. (1994)
Phonon-limited electron drift mobility μn ~= 2000 cm2 V-1 s-1 77 K ; calculated for very weak doped AlN  
Mobility holes μp 14 cm2 V-1 s-1 290 K ; doped single crystal,
the authors point out that this result must be viewed with some caution
Edwards et al. (1965)