Wongchotiqul et al. (1996)
1 - m*/mo = 0.42;
2 - m*/mo = 0.52
Chin et al. (1994)
| Conductivity σ | 10-3 ÷ 10-5 Ω-1 cm-1 | 290 K ; doped (Al2OC) single p-type crystals (blue) |
Edwards et al. (1965) |
| 10-11 ÷ 10-13 Ω-1 cm-1 | 300 K ; undoped single crystals (colorless or pale yellow) see also Conductivity vs. reciprocal temperature. |
||
| Electron drift mobility μn | ~= 300 cm2 V-1 s-1 | 300 K ; calculated | Chin et al. (1994) |
| Phonon-limited electron drift mobility μn | ~= 2000 cm2 V-1 s-1 | 77 K ; calculated for very weak doped AlN | |
| Mobility holes μp | 14 cm2 V-1 s-1 | 290 K ; doped single crystal, the authors point out that this result must be viewed with some caution |
Edwards et al. (1965) |
|
AlN, Wurtzite. Electron mobility vs. electron concentration at
300 K. Wongchotiqul et al. (1996) |
|
AlN, Wurtzite. The temperature dependence of phonon limited
electron drift mobility calculated for two values of electron effective
mass m*. 1 - m*/mo = 0.42; 2 - m*/mo = 0.52 Chin et al. (1994) |
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