AlN - Inllium Nitride

Impurities and defects


Donors

Native donors:

Si, Mg (ionization energy ΔE ~= 1 eV)

Donors:

C, Ge, Se


Ionization energies (Et-Ec)
   
d1 is the donor level of N vacancies (VN) 0.17 eV Tansley & Egan (1992);
Chu et al. (1967);
Francis and Worell (1976);
Jenkins and Dow (1989);
Mohammad et al. (1995);
Boguslawski et al. (1996);
Gorczyca et al. (1997)
d2 is the donor level of N vacancies (VN) 0.5 eV  
d3 is the donor level of N vacancies (VN)
 
0.8-1.0 eV
 
 
d4 is the donor levels of C in Al sites (CAl) 0.2 eV  
d5 is the donor levels of N in Al sites (NAl) 1.4-1.85 eV  
d6 is the donor levels of Al in N sites (AlN) 3.4-4.5 eV  

Acceptors

Acceptors:

C, Hg


Ionization energies (Ev-Et)
   
a1 is the acceptor levels of Al vacancies (VAl) 0.5 eV
Tansley & Egan (1992);
Chu et al. (1967);
Francis and Worell (1976);
Jenkins and Dow (1989);
Mohammad et al. (1995);
Boguslawski et al. (1996);
Gorczyca et al. (1997)
a2 is the acceptor levels of C in N sites (CN) 0.4 eV
 
a3 is the acceptor levels of Zn in Al sites (ZnAl) 0.2 eV
 
a4 is the acceptor levels of Mg in Al sites (MgAl) 0.1 eV
 
AlN, Wurtzite. Level positions in the forbidden gap of AlN.
Tansley & Egan (1992)

Luminescence peak energies Epeak

Deep defect states

Binding energies of acceptors