Basic Parameters for Hexagonal crystal structure

Breakdown field | (2÷6)x 10^{6} V cm^{-1} |
300 K | Brozek et al. (1994). |

Mobility electrons, µ_{n} |
=< 200 cm2 V^{-1} s^{-1} |
300 K, for N = 6 x 10_{d}^{16} cm^{-3} |
Waters et al. (1995). |

Mobility holes, µ_{p} |
=< 500 cm2 V^{-1} s^{-1} |
300 K, carrier concentration p = 5 x 10^{18} cm^{-3} |
Litvinov et al. (1998) . |

Diffusion coefficient electrons | =<5 cm2 s^{-1} |
300 K | |

Diffusion coefficient holes | =<12 cm2 s^{-1} |
300 K |

Unintentionally doped BN films are p-type with carrier concentrations in the high 10

Breakdown field | (1÷3)x 10^{6} V cm^{-1} |
300 K | Lopatin (1994) |

BN, hexagonal. Resistivity vs. temperature above 700°C. A: from bulk resistance of a disk measured in c direction. B--E: literature data for comparison. Carpenter & Kirby (1982) |