BN - Boron Nitride

Mobility and Hall Effect

Zinc Blende BN. The highest mobility achieved

Mobility   Remarks Referens
   for n-type mn ~= 200 cm2/V · s Nd = 6 x 10 · 16 cm-3 Waters (1995)
   for p-type mp ~= 500 cm2/V · s room temperature for carrier concentration
p =5x10·18cm-3
Litvinov et al. (1998)
electrical breakdown field: (2...6) x 106 V/cm   Brozek et al. (1994)
carrier concentration
and mobility:
     
   n
   m
1015 cm-3
0.2 cm2/Vs
500 K, polycrystalline material,
type of carrier not determined
Bam et al.(1976)
   n
   m
1014 cm-3
4 cm2/Vs
900 K, mobility increases exponentially
with rising temperature between 500 K and 900K 
Bam et al.(1976)

Hexagonal BN.

The electrical breakdown field: (1...3) x 106 V/cm [Lopatin (1994)].