|Energy gap||5.46-5.6 eV|
|Energy separation (EΓ1)||7.3-7.4 eV|
|Energy of spin-orbital splitting Es0||0.006 eV|
|Intrinsic carrier concentration||~10-27 cm-3|
|Resistivity of diamonds types I and IIa (usually)||~1016Ω·cm|
|Resistivity of diamonds type IIb||~1-103Ω·cm|
|Effective conduction band density of states||~1020 cm-3|
|Effective valence band density of states||~1019 cm-3|
|Band structure and carrier concentration of Diamond. 300 K
|Temperature dependence of the energy gap
(Clark et al., 1964)
The surfaces of equal energy are ellipsoids.
Effective mass of density of states in one valley of conduction band
There are 6 equivalent valleys in the "Si-like" conduction band of diamond.
Effective mass of density of states for all valleys of conduction band mcd≈ 1.9mo
Effective mass of conductivity mcc=3(1/ml+ 2/mt)-1=0.48mo
Cyclotron resonance measurement date (Rauch ):
Effective mass of density of states mν=0.8mo
There is a considerable uncertainty regarding the density of states effective mass. There is a considerable uncertainty regarding the density of states effective mass. The values as low as mν=0.16mo (Kemmey and Wederpohl ) and as high as mν=1.1mo (Dean ) have been reported. For estimations, one can use the value of mν=0.8mowhich is close to mν=0.75mo (Collins and Williams ) and mν=0.88mo (Prosser ).
Boron is a deep acceptor level with activation energy of 0.37 eV. So far semiconductor applications of diamond have been based almost exclusively on boron-doped p-type samples (Gildenblat et al. ).
Nitrogen is a most common impurity (donor) in diamond. It is difficult to specify the activation energy since nitrogen can appear as isolated substitutional impurity, simple aggregates or platelets (Stoneham ). In particular, the energy levels of 1.7 eV and 4 eV below the bottom of the conduction band are often ascribed to nitrogen impurities (Davies ; Vermeulen and Farer ; Novikov ).