Electrical properties

Basic Parameters

Mobility and Hall Effect

	Electron Hall mobility versus temperature for different doping levels. (Stillman et al. [1970] 1. Bottom curve: Nd=5·1015cm-3; 2. Middle curve : Nd=1015cm-3; 3. Top curve : Nd=5·1015cm-3 For weakly doped GaAs at temperature close to 300 K, electron Hall mobility µH=9400(300/T) cm2 V-1 s-1
	Electron Hall mobility versus temperature for different doping levels and degrees of compensation (high temperatures): Open circles: Nd=4Na=1.2·1017 cm-3; Open squares: Nd=4Na=1016 cm-3; Open triangles: Nd=3Na=2·1015 cm-3; Solid curve represents the calculation for pure GaAs (Blakemore[1982]). For weakly doped GaAs at temperature close to 300 K, electron drift mobility µn=8000(300/T)2/3 cm2 V-1 s-1
	Drift and Hall mobility versus electron concentration for different degrees of compensation T= 77 K (Rode [1975]).
	Drift and Hall mobility versus electron concentration for different degrees of compensation T= 300 K (Rode [1975]).

Approximate formula for the Hall mobility

	Temperature dependence of the Hall factor for pure n-type GaAs in a weak magnetic field (Rode [1975]).
	Temperature dependence of the Hall mobility for three high-purity samples (Wiley [1975])

For GaAs at temperatures close to 300 K, hole Hall mobility

The hole Hall mobility versus hole density. (Wiley [1975])

At T= 300 K, the Hall factor in pure GaAs

Transport Properties in High Electric Fields

	Field dependences of the electron drift velocity. (Blakemore[1982]). Solid curve was calculated by (Pozhela and Reklaitis[1980]). Dashed and dotted curves are measured data, 300 K
	Field dependences of the electron drift velocity for high electric fields, 300 K. (Blakemore[1982]).
	Field dependences of the electron drift velocity at different temperatures. (Pozhela and Reklaitis[1980]).
	Fraction of electrons in L and X valleys. nL and nX as a function of electric field F at 77, 160, and 300 K, Nd=0 (Pozhela and Reklaitis[1980]). Dotted curve - L valleys, dashed curve - X valleys.
	Mean energy E in Γ, L, and X valleys as a function of electric field F at 77, 160, and 300 K, Nd=0 (Pozhela and Reklaitis[1980]). Solid curve - Γ valleys, dotted curve - L valleys, dashed curve - X valleys.
	Frequency dependences of electron differential mobility. µd is real part of the differential mobility; µd*is imaginary part of differential mobility. F= 5.5 kV cm-1 (Rees[1969]).
	The field dependence of longitudinal electron diffusion coefficient D||F. Solid curves 1 and 2 are theoretical calculations. Dashed curves 3, 4, and 5 are experimental data. Curve 1 - from (Pozhela and Reklaitis[1980]). Curve 2 - from (Fauquembergue et al.[1980]). Curve 3 - from (Ruch and Kino[1968]). Curve 4 - from (Bareikis et al.[1978]). Curve 5 - (from de Murcia[1991]).
	Field dependences of the hole drift velocity at different temperatures. (Datal et al. [1971]).
	Temperature dependence of the saturation hole velocity in high electric fields (Datal et al. [1971]).
	The field dependence of the hole diffusion coefficient. (Joshi and Crendin [1989]).

Impact Ionization

There are two schools of thought regarding the impact ionization in GaAs.

The first one states that impact ionization rates α_i and β_i for electrons and holes in GaAs are known accurately enough to distinguish such subtle details such as the anisothropy of α_i and β_i for different crystallographic directions. This approach is described in detail in the work by Dmitriev et al.[1987].

	Experimental curves αi and βi versus 1/F for GaAs. (Pearsall et al. [1978]).
	Experimental curves αi and βi versus 1/F for GaAs. (Pearsall et al. [1978]).
	Experimental curves αi and βi versus 1/F for GaAs. (Pearsall et al. [1978]).

Breakdown voltage and breakdown field versus doping density for an abrupt p-n junction. (Kyuregyan and Yurkov [1989]).

Recombination Parameter

Surface recombination velocity versus doping density (Aspnes [1983]). Different experimental points correspond to different surface treatment methods.

Radiative recombination coefficient (Varshni[1967])

Auger coefficient