| Ga0.47In0.53As | GaxIn1-xAs | Remarks | Referens | |
| Bulk modulus | 6.62·1011 dyn/cm2 | (5.81+1.72x)·1011 dyn/cm2 | 300 K | Goldberg Yu.A. & N.M. Schmidt (1999) |
| Debye temperature | 330 K | (280+110x) K | ||
| Density | 5.50 g/cm3 | 5.68-0.37x g/cm3 | 300 K | Goldberg Yu.A. & N.M. Schmidt (1999) |
| Melting point, Tm | ~= 1100° C | |||
| Specific heat | 0.3 J g-1°C -1 | |||
| Thermal conductivity | 0.05 W cm-1 °C -1 |
see Temerature dependences | ||
| Thermal expansion coefficient, linear | 5.66x10-6 °C -1 | see Temerature dependences | ||
| Hardness on the Mohs scale | *** | |||
| Surface microhardness (using Knoop's pyramid test) |
see Micro Hardness | |||
| Piezoelectric constant | e14= -(0.045+0.115x) C/m2 | |||
| Cleavage plane | {110} | {110} | ||
| Lattice constant | 5.8687 A | (6.0583-0.405x) A |
| Cleavage plane | {110} |
| Bulk modulus (compressibility-1) | |
| Bs=(C11+2C12)/3 | Bs = (5.81+1.72x)·1011 dyn/cm2 |
| Anisotropy factor | |
| C'=(C11-C12)/2 | A = (0.48+0.07x) |
| Shear modulus | |
| C'=(C11-C12)/2 | C' = (1.9+1.38x)·1011 dyn/cm2 |
| [100] Young's modulus | |
| Yo=(C11+2C12)·(C11-C12)/(C11+C12) | Yo= (5.14+3.39x)·1011 dyn/cm2 |
| [100] Poisson ratio | |
| σo=C12/(C11+C12) | σo = (0.35-0.04x) |
 |
Micro hardness (Hv) and energy gap values Eg vs composition
of three alloy systems: In1-xGaxAs (1, 2), In1-xGaxAs0.9Sb0.1 (3, 4) and InAs1-x-0.1Sb0.1Py (5, 6). Measured using (111) oriented epilayers at 50 g weight (stress) on Vikkers pyramid B.A.Matveev et al. Izv.Akad.Nauk SSSR, Neorg.Mater, 26 (1990), 639 Contact authors: B.A.Matveev |
 |
Knoop microhardness anisotropy on the {100} plane for Ga0.47In0.53As. Adachi (1992) |
| Wave propagation Direction |
Wave character | Expression for wave speed | Wave speed (in units of 105 cm/s) |
| [100] | VL (longitudinal) | (C11/&rho)1/2 |
3.83+0.90x
|
| VT (transverse) | (C44/&rho)1/2 |
2.64+0.71x
|
|
| [100] | Vl | [(C11+Cl2+2C44)/2&rho]1/2 |
4.28+0.96x
|
| Vt|| | Vt||=VT=(C44/ρ)1/2 |
2.64+0.71x
|
|
Vt |
[(C11-C12)/2&rho]1/2 |
1.83+0.65x
|
|
| [111] | Vl' | [(C11+2C12+4C44)/3&rho]1/2 |
4.41+0.99x
|
| Vt' | [(C11-C12+C44)/3&rho]1/2 |
2.13+0.67x
|
 |
Raman-active phonon modes in GaxIn1-xAs. The symbols show experimental results. 1 - LO phonon behavior, 2 - TO phonon behavior, 3,4 - mixed mode behavior. Pearsall et al. (1983) |
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