Remarks  Referens  
Dielectric constant (static)  12.5 +1.44y  Ga_{0.47}In_{0.53}As_{y}P_{1y}; 300 K  
Dielectric constant (high frequency)  9.61 +2.0y  Ga_{0.47}In_{0.53}As_{y}P_{1y}; 300 K  
Infrared refractive index  ~=3.1+0.46y  300 K  Goldberg Yu.A. & N.M. Schmidt (1999) 
Radiative recombination coefficient  1.2 x 10^{10} cm^{3} s^{1} 1.1 x 10^{10} cm^{3} s^{1} 
Ga_{0.47}In_{0.53}As_{0.24}P_{0.76}; y=0.24;
300 K Ga_{0.47}In_{0.53}As_{0.6}P_{0.4}; y=0.6; 300 K 

Optical phonon energy  ### meV  300 K 
Refractive index n versus wavelength for different composition alloys latticematched to InP. 300 K 1. y=1, 2. y=0.7, 3. y=0.61 4. y=0.54, 5. y=0 (Burkhard et al. (1982)). 

Refractive index n versus photon energy for different composition alloys latticematched to InP. 300 K. 1. y=1 2. y=0.55 3. y=0 (Kelso et al. (1983)). 

Refractive index n for composition alloys latticematched to InP versus composition parameter y
at wavelength λ=1.55 µm. Symbols represent the experimental and calculated data from several papers. (Amiotti and Landgren (1993)). 

The absorption coefficient versus energy difference EE_{g} for different composition alloys latticematched to InP. 300 K. 1. y=1, (E_{g}=0.75 eV) 2. 0.54<y<0.7 3. y=0, (E_{g}=1.35 eV) (Burkhard et al. (1982)). 

The absorption coefficient near the intrinsic absorption edge for Ga_{0.28}In_{0.72}As_{0.6}P_{0.4} (Ge doped, composition alloy latticematched to InP) versus photon energy at different doping level N, 80 K N (cm^{3}): 1. 2·10^{16}, 2. 3.5·10^{17}, 3. 9.8·10^{17}, 4. 2.4·10^{18}. (Rajalakshmi and Arora (1990)). 

Absorption coefficient versus photon energy for different composition alloys latticematched to InP. 300 K. 1. y=0.24, 2. y=1. (Adachi (1989)). 