GaInAsP - Gallium Indium Arsenide Phosphide

Thermal properties


Basic parameters

    Remarks Referens
Bulk modulus (7.1-0.516y+0.02y2)·1011 dyn cm-2 Ga0.47In0.53AsyP1-y; 300K Goldberg Yu.A. & N.M. Schmidt (1999)
Debye temperature (425-103y) K Ga0.47In0.53AsyP1-y; 300K  
Density (4.81+0.552y+0.138y2) g cm-3 Ga0.47In0.53AsyP1-y; 300K  
Melting point, Tm ~= 1100° C    
Specific heat (0.31 +0038y -0.008y2) J g-1°C -1 Ga0.47In0.53AsyP1-y; 300K  
Thermal conductivity (0.68-1.77y+1.25y2) W cm-1 °C -1
Ga0.47In0.53AsyP1-y; 300K

Goldberg Yu.A. & N.M. Schmidt (1999)

Thermal expansion coefficient, linear (4.6+1.06y)x10-6 °C -1 Ga0.47In0.53AsyP1-y; 300K  

Thermal conductivity

(0.68-1.77y+1.25y2) W cm-1 °C -1
GaxIn1-xAsyP1-y. Thermal resistivity vs. composition parameter y for GaxIn1-xAsyP1-y lattice-matched to InP
300K
The solid and dashed lines are the results calculated according to two different models
Adachi (1992)
GaxIn1-xAsyP1-y. Specific heat at constant pressure vs. temperature for different GaxIn1-xAsyP1-y alloys.
1 - x=y=0.2;
2 - x=y=0.4;
3 - x=y=0.8.
Sirota et al. (1982)
GaxIn1-xAsyP1-y. Debye temperature vs. temperature for different GaxIn1-xAsyP1-y alloys.
1 - x=y=0.2;
2 - x=y=0.4;
3 - x=y=0.6;
4 - x=y=0.8.
Sirota et al. (1982)
GaxIn1-xAsyP1-y. Thermal expansion coefficients vs. y-composition parameter for GaxIn1-xAsyP1-y lattice-matched to
GaAs (curve 1);
ZnSe (curve 2);
and InP (curve 3)
Adachi (1982,b)



Lattice properties

Lattice parameters

    Remarks Referens
Lattice constant, a 5.4505 (GaP) ÷ 6.0583 (InAs) 300K
  a~= 5.8688-0.4176x+0.1896y+0.0125xy A   Adachi (1982)
compositions lattice-matched to InP a~= 5.8687 A x~=0.1894y/(0.4184-0.013y) ~= 0.47y  
compositions lattice-matched to GaAS a~= 5.65325 A x~=(1+y)/2.08  
compositions lattice-matched to ZnSe a~= 5.6676 A x~=(1.06+y)/2.06  

Linear thermal expansion coefficient