| Remarks | Referens | ||
| Crystal structure | Zinc Blende | ||
| Group of symmetry | Td2-F43m | ||
| To estimate the value of any parameter b of one can use an approximate formula: b(x,y)~= xy bGaAs +(1-x)y bInAs + x(1-y) bGaSb +(1-x)(1-y) bInSb |
Adachi (1987) |
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| Number of atoms in 1 cm3 | 3.53·1022 | 300 K; compositions lattice-matched to GaSb. |
Mikhailova M.P. (1999) |
| 3.59·1022 | 300 K; compositions lattice-matched to InAs. |
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| Bulk modulus | 5.7·1011 dyn cm-2 | 300 K; compositions lattice-matched to GaSb | Mikhailova M.P. (1999) |
| 5.8·1011 dyn cm-2 | 300 K; compositions lattice-matched to InAs. | ||
| Debye temperature | ~270 K | 300 K; compositions lattice-matched to GaSb and InAs |
|
| Density | (5.69-0.08x) g cm-3 | 300 K; compositions lattice-matched to GaSb. see also Mechanical properties |
|
| Melting point, Tm | ~= 1100° C | ||
| Specific heat | ~0.25 J g-1°C -1 | 300K | |
| Dielectric constant (static) | 15.3+0.4x | 300 K; compositions lattice-matched to GaSb. |
Mikhailova M.P. (1999) |
| 15.15+0.35x | 300 K; compositions lattice-matched to InAs.. |
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| Dielectric constant (high frequency) | 12.6+1.8x | 300 K; compositions lattice-matched to GaSb. |
|
| 12.3+1.8x | 300 K; compositions lattice-matched to InAs. |
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| Infrared refractive index | ~=3.51+0.25y | 300 K; compositions lattice-matched to InAs. see aso Refractive index n vs. photon energy |
|
| Radiative recombination coefficient | ~ 10-10 cm3 s-1 | 300 K | |
| Optical phonon energy | ~= 0.03 meV | 300 K | |
| Energy gaps, Eg |
(0.29 -0.65x+0.6x2) eV | 300 K; compositions lattice-matched to GaSb. |
Mikhailova M.P. (1999) |
| (0.36 -0.23x+0.54x2) eV | 300 K; compositions lattice-matched to InAs. |
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| Electron affinity | (4.87 -0.81x) eV | 300 K; compositions lattice-matched to GaSb. | |
| (4.9 -0.83x) eV | 300 K; compositions lattice-matched to InAs. | ||
| Effective conduction band density of states | 2.5x1019 (0.022+0.03x -0.012x2)3/2 cm-3 | 300 K; compositions lattice-matched to GaSb. |
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| 2.5x1019 (0.023+0.032x -0.012x2)3/2 cm-3 | 300 K; compositions lattice-matched to InAs. |
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| Effective valence band density of states | 2.5x1019 (0.41+0.16x +0.23x2) 3/2 cm-3 | 300 K; compositions lattice-matched to GaSb. |
|
| 2.5x1019 (0.41+0.14x +0.23x2) 3/2 cm-3 | 300 K; compositions lattice-matched to InAs. |
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| Effective electron mass me | 0.022 -0.03x +0.012x2 mo | 300 K; compositions lattice-matched to GaSb |
Mikhailova M.P. (1999) |
| 0.023 -0.032x +0.012x2 mo | 300 K; compositions lattice-matched to InAs |
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| Effective hole masses (heavy) mh | mh ~= 0.4 mo | 300 K; compositions lattice-matched to GaSb | |
| mh ~= 0.41 mo | 300 K; compositions lattice-matched to InAs | ||
| Effective hole masses (light) mlp | mlp ~= (0.025 +0.025x) mo |
300 K; compositions lattice-matched to GaSb | |
| mlp ~= (0.026 +0.026x) mo |
300 K; compositions lattice-matched to InAs | ||
| Effective hole masses (split-off band) ms | mso ~= *** mo | 300K | |
| Lattice constant | 6.0959 A | 300 K; compositions lattice-matched to GaSb |
|
| 6.0583 A | 300 K; compositions lattice-matched to InAs see also Lattice properties |
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| Auger recombination coefficient |
2 x 10-27(InAsSb)-- 5x10-30(GaSb) cm6/s | 300 K; compositions lattice-matched to GaSb | |
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