Remarks  Referens  
Conductivity σ  6÷12 Ω^{1} cm^{1}  300 K ; n ~= 10^{17} cm^{3}, undoped layers grown by vaporphase technique on sapphire  Ilegems (1972); Ilegems & Dingle (1973); Crouch et al. (1978) 
Mobility electrons μ_{n}  =< 440 cm^{2} V^{1} · s ^{1}  300 K ; purest material, n ~= 10^{17} cm^{3}  Ilegems (1972); Ilegems & Dingle (1973); Crouch et al. (1978) 
GaN, Wurtzite sructure. Electron Hall mobility vs. temperature for two samples Ilegems & Montgomery (1973). 

GaN, Wurtzite sructure. Electron Hall mobility versus temperature
for different doping levels and different degrees of compensation θ
= N_{a}/N_{d}. 1  unintentionally doped [Nakamuraetal.(1992)]; 2  N_{d} = 3.1x 10^{17} cm^{3}, θ < 0.03 [Gotz et al. (1996)]; 3  N_{d} = 1.1 x 10^{17}cm^{3}, θ ~= 0.3 [Gotz et al. (1996)]; 4  N_{d} = 2.3 x 10^{17} cm^{3}, θ < 0.04 [Gotz et al. (1996)]; 5  N_{d} = 7.4 x 10^{17} cm^{3}, θ < 0.01 [Gotz et al. (1996)]; 6  The concentration of introduced Si N_{do} = 2 x 10^{19}cm^{3} [Gotz et al. (1996)]. The calculations of electron mobility vs. the temperature for different doping levels and compensation ratios see in Chin et al. (1994). 

GaN, Wurtzite sructure. The calculated electron drift (solid
curves) and Hall (dashed curves) mobility versus carrier concentration
at different compensation ratios θ: 1  θ = 0; 2  θ = 0.15; 3  θ = 0.30; 4  θ = 0.45; 5  θ = 0.60; 6  θ = 0.75; 7  θ = 0.90. T = 77 K. Experimental data are taken from four different papers Chin et al. (1994). 

GaN, Wurtzite sructure. The calculated electron drift (solid
curves) and Hall (dashed curves) mobility versus carrier concentration
at different compensation ratios θ: 1  θ = 0; 2  θ = 0.15; 3  θ = 0.30; 4  θ = 0.45; 5  θ = 0.60; 6  θ = 0.75; 7  θ = 0.90. T = 300K. Experimental data are taken from four different papers Chin et al. (1994). 

GaN, Wurtzite sructure. Hole Hall mobility versus temperature. Hole
concentration at T= 300 K and p ~= 4 x 10^{12} cm^{3}
Rubin et al. (1994). 

GaN, Wurtzite sructure. Hole Hall mobility versus hole concentration
GaN at T = 300 K Gaskill et al. (1995). 
GaN, Zinc Blende (cubic). Electron Hall mobility versus temperature
for different doping levels (cubic GaN). Electron concentration at room temperature: 1  1.5 x 10^{18} cm^{3}; 2  1.3 x 10^{19} cm^{3}, 3  2.8 x 10^{19} cm^{3}; 4  1.5 x 10^{20} cm^{3}, 5  3 x 10^{20} cm^{3}. Kim et al. (1994). 

GaN, Zinc Blende (cubic). The electron Hall mobility at three
temperatures vs. the carrier concentration. T (K): 180; 2150; 3300. Kim et al. (1994). 

GaN, Zinc Blende sructure. The hole Hall mobility vs the temperature
(two samples). The hole concentration p = (0.6  1) x 10^{13}
cm^{3} at T= 300K . As et al. (1996). 
GaN. Electron Hall mobility and sheet concentration vs. temperature
for twodimensional gas in AlGaN/GaN heterostructure grown on 6HSiC substrate.(the
sample as in next Figure). Gaska et al. (1998). 

GaN. Measured (open circles) and calculated (solid lines)
Hall mobility versus temperature (the sample as in previous Figure).
Electron scattering processes by optical and acoustic phonons, piezoelectric,
and impurity scattering were taken into account. Gaska et al. (1998). 

GaN. Electron Hall mobility versus temperature for two AlGaN/ GaN
heterostructures (1,2) and related GaN layers (1',2' ) grown
on sapphire. Electron concentrations in the twodimensional electron gas
and GaN layers at room temperature are: 1: n_{2deg} ~= 7 x 10^{12} cm^{2}, 2: n_{2deg} ~= 7.5 x 10^{12} cm^{2}, 1': n ~= 7 x 10^{16} cm^{3}, 2': n ~= 1.5 x 10^{18} cm^{3} Dziuba et al. (1997). 