GaN - Gallium Nitride

Recombination Parameters

    Remarks Referens
Radiative recombination coefficient 1.1 x 10-8 cm3 s-1. 300 K Muth et al. (1997)
GaN, Wurtzite. The dependence of hole diffusion length versus electron concentration.
Chernyak et al. (1996)
GaN, Wurtzite. The temperature dependences of hole diffusion lengths for two values of electron concentration at 300 K.
1 - n = 5 x 1015 cm-3,
2 - n = 2 x 1018 cm-3
Chernyak et al. (1996)