Energy gap  0.726 eV 
Energy separation (E_{ΓL}) between Γ and L valleys  0.084 eV 
Energy separation (E_{ΓX}) between Γ and X valleys  0.31 eV 
Energy spinorbital splitting  0.80 eV 
Intrinsic carrier concentration  1.5·10^{12} cm^{3} 
Intrinsic resistivity  10^{3} Ω·cm 
Effective conduction band density of states  2.1·10^{17} cm^{3} 
Effective valence band density of states  1.8·10^{19} cm^{3} 
Band structure and carrier concentration of GaSb. 300 K E_{g}= 0.726 eV E_{L} = 0.81 eV E_{X} = 1.03 eV E_{so} = 0.8 eV 
The temperature dependences of the intrinsic carrier concentration. 
Energy gap narrowing versus acceptor acceptor doping density. Curve is calculated for pGaSb according to Jain et al. [1990]. Points show experimental results (Titkov et al. [1981]). 
For Γvalley  m_{Γ} = 0.041m_{o} 
In the L valley the surfaces of equal energy are ellipsoids  
m_{l}= 0.95m_{o}  
m_{t}= 0.11m_{o}  


m_{L}= 16(m_{l}m_{t}^{2})^{1/3}= 0.57m_{o}  
In the X valley the surfaces of equal energy are ellipsoids  
m_{l}= 1.51m_{o}  
m_{t}= 0.22m_{o}  


m_{X}= 9(m_{l}m_{t}^{2})^{1/3}= 0.87m_{o} 
Heavy 
m_{h} = 0.4m_{o} 
Light 
m_{lp} = 0.05m_{o} 

m_{so} = 0.14m_{o} 
Effective mass of density of states  m_{v} = 0.8m_{o} 
Effective mass of density of conductivity (Heller and Hamerly [1985]) 
m_{vc} = 0.3m_{o} 
The diagram of IV group donor states (Vul' et al. [1970]). 
Te(L)  Te(X)  Se(L)  Se(X)  S(L)  S(X) 
~0.02  ≤0.08  ~0.05  ~0.23  ~0.15  ~0.30 
E_{a1}  E_{a2}  Si  Ge  Zn 
0.03  0.1  ~0.01  ~0.009  ~0.037 