Energy gap | 0.726 eV |
Energy separation (EΓL) between Γ and L valleys | 0.084 eV |
Energy separation (EΓX) between Γ and X valleys | 0.31 eV |
Energy spin-orbital splitting | 0.80 eV |
Intrinsic carrier concentration | 1.5·1012 cm-3 |
Intrinsic resistivity | 103 Ω·cm |
Effective conduction band density of states | 2.1·1017 cm-3 |
Effective valence band density of states | 1.8·1019 cm-3 |
Band structure and carrier concentration of GaSb. 300 K Eg= 0.726 eV EL = 0.81 eV EX = 1.03 eV Eso = 0.8 eV |
The temperature dependences of the intrinsic carrier concentration. |
Energy gap narrowing versus acceptor acceptor doping density. Curve is calculated for p-GaSb according to Jain et al. [1990]. Points show experimental results (Titkov et al. [1981]). |
For Γ-valley | mΓ = 0.041mo |
In the L- valley the surfaces of equal energy are ellipsoids | |
ml= 0.95mo | |
mt= 0.11mo | |
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mL= 16(mlmt2)1/3= 0.57mo | |
In the X- valley the surfaces of equal energy are ellipsoids | |
ml= 1.51mo | |
mt= 0.22mo | |
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|
mX= 9(mlmt2)1/3= 0.87mo |
Heavy |
mh = 0.4mo |
Light |
mlp = 0.05mo |
|
mso = 0.14mo |
Effective mass of density of states | mv = 0.8mo |
Effective mass of density of conductivity (Heller and Hamerly [1985]) |
mvc = 0.3mo |
The diagram of IV group donor states (Vul' et al. [1970]). |
Te(L) | Te(X) | Se(L) | Se(X) | S(L) | S(X) |
~0.02 | ≤0.08 | ~0.05 | ~0.23 | ~0.15 | ~0.30 |
Ea1 | Ea2 | Si | Ge | Zn |
0.03 | 0.1 | ~0.01 | ~0.009 | ~0.037 |