References:

• Vorobyev L.E. Handbook Series on Semiconductor Parameters, vol.1, M. Levinshtein, S. Rumyantsev and M. Shur, ed., World Scientific, London, 1996, pp. 33-57.
• Dargys A. and J. Kundrotas Handbook on Physical Properties of Ge, Si, GaAs and InP, Vilnius, Science and Encyclopedia Publishers, 1994

• Babich, V. M., P. I. Baranskii, I. V. Dakhovskii, and A. G. Samoylovich, Ukrain Fiz. Zhumal 14, 3 (1969) 418-422.
• Bagaev, V. S., G. P. Proshko, and A. P. Shotov, Sov. Phys. Solid State 4, 11 (1963) 2363-2368.
• Bruner L. J., and R. W. Keyes, Phys. Rev. Lett. 7, 2 (1961) 55-56.
• Carruthers J. A., T. H. Geballe, H. M. Rosenberg, and J. M. Ziman, Proc. Royal Soc.238, 1215 (1957) 502-514.
• Cordona M., K. L. Shaklee and F. H. Pollak, Phys. Rev. 154, 3 (1967) 696-720.
• Cuttris D. B., Bell Syst. Techn. J. 40, 2 (1961) 509-523.
• Debye P. P. and E. M. Conwell, Phys. Rev. 93, 4 (1954) 693-706.
• Fistul V. I., M. I. Iglitsyn, and E. M. Omelyanovskii, Sov. Phys. Solid State 4, 4 (1962) 784-785.
• Fistul V. I., Heavy Doped Semiconductors, "Nauka", Moscow, 1967 (in Russian).
• Gibson A.F., C.B. Hatch, P/N/D/Maggs, D.R.Tilley, A.C. Walker, J.Phys.C 9 (1976) 3259-3275.
• Glassbrenner J. and G. A. Slack, Phys. Rev. 164, 4A (1964) 1058-1069.
• Golikova 0. A., B. Ya. Moizhez and L. S. Stilbans, Sov. Phys. Solid State 3, 10 (1962) 2259-2265.
• Hilsum C., Electron. Lett. 10, 13 (1974) 259-260.
• Hutchinson C. J., C. Lewis, J. A. Savage and A. Pitt, Appl. Optics 21, 8 (1982) 1490-1495.
• Icenogle H. W., B. C. Platt and W. L. Wolfe, Appl. Optics 15, 10 (1976) 2348-2351.
• Jacoboni C., F. Nava, C. Canali and G. Ottaviani, Phys. Rev. B24, 2 (1981) 1014-1026.
• Jain S. C. and D. A. Roulston, Solid State Electron. 34, 5 (1991) 453-465.
• Kyuregyan A. S. and S. N. Yurkov, Sov. Phys. Semicond. 23, 10 (1989) 1126-1132.
• Macfarlane G. G., T. P. McLean, J. E. Quarrington and V. Roberts, Phys. Rev. 108, 6 (1957) 1377-1383.
• Mikawa T., S. Kagawa, T. Kaneda, Y. Toyama, and 0. Mikami, Appl. Phys. Lett. 37, 4 (1980) 387-389.
• Morin F. J., Phys. Rev. 93, 1 (1954) 62-63.
• Nikanorov S. P. and B. K. Kardashev, Elasticity and Dislocation Inelasicity of Crystalls, Moscow, "Nauka" Publ. House, 1985 (in Russian).
• Nilsson G. and G. Nelin, Phys. Rev. B6, 10 (1972) 3777-3786.
• Novikova S. I., Sov. Phys. Solid State 2, 1 (1960) 37-38.
• Okhotin A. S., A. S. Pushkarskii and V. V. Gorbachev, Thermophysical Properties of Semiconductors, Moscow, "Atom" Publ. House, 1972, (in Russian).
• Ottaviani G., C. Canali, F. Nava, and J. W. Mayer, J. Appl. Phys. 44, 6 (1973) 2917-2918.
• Pankove J. I. and P. Aigrain, Phys. Rev. 126, 3 (1962) 956-962.
• Philipp H. P. and E. A. Taft, Phys. Rev. 113, 4 (1959) 1002-1005.
• Piesbergen U., Z. Naturforshung, 18a, 2 (1963) 141-147.
• Reggiani L., C. Canali, F. Nava, and G. Ottaviani, Phys. Rev. B16, 6 (1977) 2786-2791.
• Reggiani L., C. Canali, F. Nava, and A. A. Quaranta, J. Appl. Phys. 49, 8 (1978) 4446-4452.
• Seysyan R. P., A. V. Varfolomeev, and B. P. Zaharchenya, Fiz. i Tekhn. Polupr. 2, 9 (1968) 1276-1280 (in Russian).
• Ukhanov Ju. I., Optical Properties of Semiconductors, "Nauka", 1977 (in Russian).
• Vasiljeva M. A., L. E. Vorobyev and V. I. Stafeev, Fiz. i Tekhn. Polupr. 1,1 (1967) 29-33 (in Russian).
• Vorobev L. E., Yu. K. Pozhela, A. S. Reklaitis, E. S. Smirnitskaya, V. I. Stafeev and A. B. Fedortsov, Sov. Phys. Semicond. 12, 4 (1978) 433-436.
• Weber W., Phys. Rev. B15, 10 (1977) 4789-4803.
• Wenzel R.G., G.P. Arnold, N.R. Greiner, Appl. Opt.12, (1973) 2245-2247.
• Zubov B.V., T.M. Murina, B.R.Olovyagin, A.M.Prokhorov, Fiz. i Tekhn. Polupr.5, (1971) 636-640 (in Russian).