Energy gap | 0.354 eV |
Energy separation (E_{ΓL}) between Γ and L valleys | 0.73 eV |
Energy separation (E_{ΓX}) between Γ and X valleys | 1.02 eV |
Energy spin-orbital splitting | 0.41 eV |
Intrinsic carrier concentration | 1·10^{15} cm^{-3} |
Intrinsic resistivity | 0.16 Ω·cm |
Effective conduction band density of states | 8.7·10^{16} cm^{-3} |
Effective valence band density of states | 6.6·10^{18} cm^{-3} |
Band structure and carrier concentration of InAs. Important minima of the conduction band and maxima of the valence band. E_{g}= 0.35 eV E_{L}= 1.08 eV E_{X}= 1.37 eV E_{so} = 0.41 eV |
E_{g} = 0.415 - 2.76·10^{-4}·T^{2}/(T+83) (eV),where T is temperature in degrees K (0 <T < 300).
N_{c}≈1.68·10^{13}·T^{3/2} (cm^{-3}).
N_{v}≈ 1.27·10^{15}·T^{3/2}(cm^{-3}).
The temperature dependences of the intrinsic carrier concentration. | |
Fermi level versus temperature for different concentrations of shallow donors and acceptors. |
E_{g}≈E_{g}(0) + 4.8·10^{-3}P (eV)where P is pressure in kbar (Edwards and Drickamer[1961]).
E_{L}≈ E_{L}(0) + 3.2·10^{-3}P (eV)
Energy gap narrowing versus donor (Curve 1) and acceptor (Curve 2 ) doping density. Curves are calculated according (Jain et al. [1990]). Points show experimental results for n-InAs (Semikolenova et al. [1978]). |
ΔE_{g} = 14.0·10^{-9}·N_{d}^{1/3} + 1.97·10^{-7}·N_{d}^{1/4} + 57.9·10^{-12}·N_{d}^{1/2} (eV)(Jain et al. [1990])
ΔE_{g} = 8.34·10^{-9}·N_{a}^{1/3} + 2.91·10^{-7}·N_{a}^{1/4} + 4.53·10^{-12}·N_{a}^{1/2} (eV)(Jain et al. [1990])
Electron effective mass versus electron concentration (Kesamanly et al. [1969]). |
For Γ-valley | m_{Γ} = 0.023m_{o} |
Nonparabolicity: E(1+αE) = h^{2}k^{2}/(2m_{Γ}) |
α = 1.4 (eV^{-1}) |
In the L-valley effective mass of density of states | m_{L}=0.29m_{o} |
In the X-valley effective mass of density of states | m_{X}=0.64m_{o} |
Heavy |
m_{h} = 0.41m_{o} |
Light |
m_{lp} = 0.026m_{o} |
Split-off band |
m_{so} = 0.16m_{o} |
Sn | Ge | Si | Cd | Zn |
0.01 | 0.014 | 0.02 | 0.015 | 0.01 |