InAs - Indium Arsenide

Optical properties

Infrared refractive index ≈3.51 (300 K)
Radiative recombination coefficient 1.1·10-10 cm3/s
Long-wave TO phonon energy hνTO ≈27 meV (300 K)
Long-wave LO phonon energy hνLO ≈29 meV (300 K)


Refractive index n versus photon energy.
Solid curve is theoretical calculation.
Points represent experimental data, 300 K. (Adachi[1989]).
For 3.75 µm < λ < 33 µm
n = [11.1 + 0.71/(1-6.5·λ-2) + 2.75/(1-2085·λ-2) - 6·10-4·λ2)]1/2,
where λ is the wavelength in µn (300 K)
(Adachi[1989]), (Lorimor and Spitzer [1965]).
Normal incidence reflectivity versus photon energy, 300 K
(Aspnes and Studna [1983]).
Absorption coefficient near the intrinsic absorption edge for n-InAs.
T=4.2 K
(Varfolomeev et al. [1975]).
Absorption coefficient versus photon energy for different donor concentration, 300 K
n (cm-3): 1. 3.6·1016, 2. 6·1017, 3. 3.8·1018.
(Dixon and Ellis [1961]).
A ground state Rydberg energy RX1= 3.5 meV
Absorption coefficient versus photon energy, T = 300 K
(Aspnes and Studna[1983]).
Free carrier absorption versus wavelength at different electron concentrations. T=300 K.
no (cm-3): 1. 3.9·1018; 2. 7.8·1017; 3. 2.5·1017; 4. 2.8·1016;
(Dixon [1961]).