## Electrical properties

Basic Parameters
Mobility and Hall Effect
Impact Ionization
Recombination Parameters

### Basic Parameters

 Breakdown field ≈(0.5÷40)·103 V/cm Mobility holes ≤5·102 cm2 V-1s-1 Diffusion coefficient electrons ≤103 cm2/s Diffusion coefficient holes ≤10 cm2/s Electron thermal velocity 7.7·105(1+1.18x-0.91x2) m/s Hole thermal velocity 1.8·105m/s

### Mobility and Hall Effect

 Electron drift mobility (dashed curves) and Hall mobility (solid curves) versus x for InAs1-xSbx. T=300 K. Electron concentration n=5·1016 cm-3 for all curves. Ionized impurity concentration Ni (cm-3): 1. 5·1016; 2. 1.25·1017; 3. 2.5·1017. Experimental points (triangles full circles, and crosses) are taken from three different papers for n=5·1016 cm-3. (Chattopadhyay et al. (1981)) Squares are experimental results for n=5·1015 cm-3 (Tsukamoto et al. (1990)). Electron drift mobility of InAs1-xSbx versus x at 77K. Ionized impurity concentration (cm-3): 1. 5·1014; 2. 1015; 3. 5·1015; 4. 1016; 5. 5·1016; (Chin et al. (1992)). Temperature dependence of electron mobility for InAs1-xSbx. Solid line represents theoretical calculation. A dislocation density of 1.5·108 cm-2 and a compensation ratio 0.5 are included. Open triangles: x=0.78 Full circles: x=0.76 n=1017 cm-3 (Egan et al. (1994)). Electron mobility versus electron concentration n=Nd - Na with series of compensation ratios θ=Na/Nd for x=0.6. T=77 K. (Chin et al. (1992)). Electron mobility versus electron concentration n=Nd - Na with series of compensation ratios θ=Na/Nd for x=0.9. T=77 K. (Chin et al. (1992)). Hole Hall mobility versus temperature for different acceptor densities. x=0 (InAs). Hole concentration at 300K po (cm-3): 1. 5.7·1016; 2. 2.6·1017; 3. 4.2·1017; 4. 1.3·1018. (Kesamanly et al. (1968)). Hole Hall mobility versus temperature for different hole concentration. x=1 (InSb). po (cm-3): 1. 8·1014; 2. 3.15·1018; 3. 2.5·1019. (Zimpel et al. (1989) and Filipchenko and Bolshakov (1976)). Hole mobility versus hole concentration. x=1 (InSb) 1. - 77 K (Filipchenko and Bolshakov (1976)), 2. - 290 K (Willey (1975)).

### Impact Ionization

 The dependences of ionization rates for electrons (α)and holes (β) versus 1/F. T=77 K. α1, β1 - for x=0 (InAs). (Mikhailova et al. (1976)). α2, β2 - for x=0.12. (Matveev et al. (1979)).

#### Parametrizations of the electron and hole ionization coefficients. T=77 K.

For electrons:

 x αo (cm-1) Fno (V cm-1) 0 1.8·105 1.6·105 0.12 0.7·106 1.5·106
For holes:

 x βo (cm-1) Fpo (V cm-1) 0 1.5·1054.5·104 6·105 1.75·105