InN - Indium Nitride

Basic Parameters

    Remarks Referens
Crystal structure Wurtzite  
Group of symmetry C46v-P63mc  
Number of atoms in 1 cm3 6.4·1022    
Debye temperature 660 K 300 K Zubrilov (2001)
370 K 0 K Davydov et al. (1999)
Melting point 1373 K also see Equilibrium N2 pressure over InN MacChesney et al. (1970)
Density 6.81 g cm-3 X-ray, 298.15 K Pearson (1967)
Dielectric constant (static) 15.3 300 K Zubrilov (2001)
Dielectric constant (static, ordinary direction) ε0, ort = 13.1 300 K Davydov et al. (1999)
Dielectric constant (static, extraordinary direction) ε0, || = 14.4 300 K Davydov et al. (1999)
Ratio between the static dielectric constant
(extraordinary and extraordinary direction)
ε0, ort / ε0, || = 0.91 300 K, independed of dielectric constant at high frequency Davydov et al. (1999)
Dielectric constant (high frequency) 8.4 300 K, using the Lyddane-Sachs-Teller relation
0high = ω2LO2TO )
Tansley (1994)
9.3 heavily doped film,
infrared reflectivity
Tyagai et al. (1977)
5.8   Inushima et al. (1999)
Infrared refractive index ~=2.9 300 K Zubrilov (2001)
  2.56 300 K, interference metod;
    n = 3-1020cm-3
λ = 1.0 μm
Tyagai et al. (1977)
  2.93 λ = 0.82μm  
  3.12 λ = 0.66μm  
Radiative recombination coefficient
2 x 10-10 cm-1 s-1 300 K Zubrilov (2001)
Effective electron mass me 0.11mo 300 K, plasma edge Tyagai et al. (1977)
0.12mo Calculated effective electron mass Foley & Tansley (1986)
0.11mo 300 K, for wurtzite crystal structure the surfaces
of equal energy in Γ valley should be
ellipsoids, but effective masses in z-direction
and perpendicular directions are estimated
to be approximately the same.
Lambrecht & Segall (1993)
Effective hole masses (heavy)mh 1.63 mo 300 K Xu & Ching (1993),
Yeo et al. (1998),
Pugh et al. (1999)
  0.5 mo calculated calc. Foley & Tansley (1986)
Effective hole masses (light) mlp 0.27 mo 300 K Xu & Ching (1993),
Yeo et al. (1998),
Pugh et al. (1999)
  0.17 mo calculated calc. Foley & Tansley (1986)
Effective hole masses (split-off band) ms 0.65 mo 300 K Xu & Ching (1993),
Yeo et al. (1998),
Pugh et al. (1999)
Effective mass of density of state mv 1.65 mo 300 K Xu & Ching (1993),
Yeo et al. (1998),
Pugh et al. (1999)
       
Lattice constant, a 3.5446 A  epitaxial layers, X-ray Pichugin & Tiachala (1978)
 

3.533 A 

300 K Zubrilov (2001)
Lattice constant, c 5.7034 A epitaxial layers, X-ray Pichugin & Tiachala (1978)
  5.693 A 300 K Zubrilov (2001)
Optical phonon energy 73 meV 300 K Zubrilov (2001)