| Remarks | Referens | ||
| Density | 6.81 g cm-3 | X-ray, 298.15 K | Pearson (1967) |
| C11 | 190 ± 7 GPa | Sheleg & Savastenko (1979) see also Wright (1997) ; Kim et al. (1996) |
| C12 | 104 ± 3 GPa | |
| C13 | 121 ± 7 GPa | |
| C33 | 182 ± 6 GPa | |
| C44 | 10 ± 1 GPa |
| Wurtzite InN. Bulk modulus (compressibility-1) | For T = 300 K |
| Bs = [ C33(C11 + C11) - 2(C13)2] x [C11+ C12-4C13+ 2C33 ]-1 | Bs = 140 GPa |
| Wave propagation direction | Wave character | Expression for wave speed |
Wave speed | |
| [100] | VL (longitudinal) | (C11/ρ )1/2 | 5.28 105 cm/s | Zubrilov A.(2001) |
| VT (transverse, polarization along [001]) | (C44/ρ )1/2 | 1.21 105 cm/s | ||
| VT (transverse,polarization along [010]) | ((C11-C12)/2ρ )1/2 | 2.51 105 cm/s | ||
| [001] | VL (longitudinal) | (C33/ρ )1/2 | 5.17 105 cm/s | |
| VT (transverse ) | (C44/ρ )1/2 | 1.21 105 cm/s |
| A1 - LO | 586 cm-1 | Davydov et al. (1999) |
| A1 - TO | 447 cm-1 | |
| E1 - LO | 593 cm-1 | |
| E1 - TO | 476 cm-1 | |
| E2 (low) | 87 cm-1 | |
| E2 (high) | 488 cm-1 |
 |
InN, Wurtzite. Polarized Raman spectra for the nominally un-doped InN layer grown on a (0001) sapphire substrate. Room-temperature. Davydov et al. (1999) |
 |
InN, Wurtzite. First-order polarized Raman spectra for the nominally undoped InN layer grown on a (1102) sapphire
substrate. Room-temperature. The inset shows the imaginary part of the dielectric function for A1 (TO) and E1(TO) phonons obtained by the Kramers-Kroning analysis of the IR reflectivity data in different geometries: E || c[A1(TO)] and E
c[A1(TO)].Davydov et al. (1999) |
| phonon wavenumbers: | Remarks | Referens | |
| νTO(Γ) | 478 cm-1 |
T=300K. reflectivity, Kramers-Kronig analysis |
Osamura et al. (1975) |
| νLO(Γ) | 694 cm-1 |
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InN, Wurtzite. Phonon dispersion curves and phonon DOS function. The disorder-induced Raman spectrum obtained at 7 K for N+-implanted InN. Davydov et al. (1999) |
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