Energy gap | 1.344 eV |
Energy separation (E_{ΓL}) between Γ and L valleys | 0.59 eV |
Energy separation (E_{ΓX}) between Γ and X valleys | 0.85 eV |
Energy spin-orbital splitting | 0.11 eV |
Intrinsic carrier concentration | 1.3·10^{7} cm^{-3} |
Intrinsic resistivity | 8.6·10^{7}Ω·cm |
Effective conduction band density of states | 5.7·10^{17} cm^{-3} |
Effective valence band density of states | 1.1·10^{19} cm^{-3} |
Band structure and carrier concentration of InP. Important minima of the conduction band and maxima of the valence band. 300 K. E_{g} = 1.34eV; E_{L} = 1.93 eV; E_{X} = 2.19 eV; E_{so} = 0.11 eV |
The temperature dependence of the intrinsic carrier concentration. | |
Fermi level versus temperature for different concentrations of shallow donors and acceptors. |
Energy gap narrowing versus donor (curve 1 and experimental points) and acceptor (curve 2) doping density,
T = 300 K. Curve 1 and experimental points (Bugajski and Lewandowski [1985]); Curve 2 (Jain et al. [1990]). |
Electrons: | |
For Γ-valley | m_{Γ} = 0.08m_{o} |
The are 4 equivalent L-valleys in the conduction band: | |
in one L-valley | m_{L} = 0.25m_{o} |
for all L-valley | m_{Ld} = 0.63m_{o} |
The are 3 equivalent X-valleys in the conduction band: | |
in one X-valley | m_{X} = 0.32m_{o} |
for all X-valley | m_{Xd} = 0.66m_{o} |
Holes: | |
Heavy | m_{h} = 0.6m_{o} |
Light | m_{lp} = 0.089m_{o} |
Split-off band | m_{so} = 0.17m_{o} |
Effective mass of density of states | m_{v} = 0.6m_{o} |
C | Hg | Zn | Cd | Si | Cu | Be | Mg | Ge | Mn |
0.04 | 0.098 | 0.035 | 0.057 | 0.03 | 0.06 | 0.03(MBE) | 0.03(MBE) | 0.021 | 0.27 |