|Energy gap||1.344 eV|
|Energy separation (EΓL) between Γ and L valleys||0.59 eV|
|Energy separation (EΓX) between Γ and X valleys||0.85 eV|
|Energy spin-orbital splitting||0.11 eV|
|Intrinsic carrier concentration||1.3·107 cm-3|
|Effective conduction band density of states||5.7·1017 cm-3|
|Effective valence band density of states||1.1·1019 cm-3|
|Band structure and carrier concentration of InP.
Important minima of the conduction band and maxima of the valence band. 300 K.
Eg = 1.34eV;
EL = 1.93 eV;
EX = 2.19 eV;
Eso = 0.11 eV
|The temperature dependence of the intrinsic carrier concentration.|
|Fermi level versus temperature for different concentrations of shallow donors and acceptors.|
|Energy gap narrowing versus donor (curve 1 and experimental points) and acceptor (curve 2) doping density,
T = 300 K.
Curve 1 and experimental points (Bugajski and Lewandowski );
Curve 2 (Jain et al. ).
|For Γ-valley||mΓ = 0.08mo|
|The are 4 equivalent L-valleys in the conduction band:|
|in one L-valley||mL = 0.25mo|
|for all L-valley||mLd = 0.63mo|
|The are 3 equivalent X-valleys in the conduction band:|
|in one X-valley||mX = 0.32mo|
|for all X-valley||mXd = 0.66mo|
|Heavy||mh = 0.6mo|
|Light||mlp = 0.089mo|
|Split-off band||mso = 0.17mo|
|Effective mass of density of states||mv = 0.6mo|