| Breakdown field | ≈5·105 V cm-1 |
| Mobility electrons | ≤5400 cm2V-1s-1 |
| Mobility holes | ≤200 cm2 V-1s-1 |
| Diffusion coefficient electrons | ≤130 cm2 s-1 |
| Diffusion coefficient holes | ≤5 cm2 s-1 |
| Electron thermal velocity | 3.9·105 m s-1 |
| Hole thermal velocity | 1.7·105 m s-1 |
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Electron Hall mobility versus temperature for different doping levels. Bottom curve - no=Nd-Na=8·1017 cm-3; Middle curve - no=2·1015 cm-3; Top curve - no=3·1013 cm-3. (Razeghi et al. [1988]) and (Walukiewicz et al [1980]). |
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Electron Hall mobility versus temperature (high temperatures): Bottom curve - no=Nd-Na~3·1017 cm-3; Middle curve - no~1.5·1016 cm-3; Top curve - no~3·1015 cm-3. (Galavanov and Siukaev[1970]). |
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Hall mobility versus electron concentration for different compensation ratios. θ = Na/Nd, 77 K. Dashed curves are theoretical calculations: 1. θ = 0; 2. θ = 0.2; 3. θ = 0.4; 4. θ = 0.6; 5. θ = 0.8; (Walukiewicz et al. [1980]). Solid line is mean observed values (Anderson et al. [1985]). |
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Hall mobility versus electron concentration for different compensation ratios θ =Na/Nd, 300 K. Dashed curves are theoretical calculations: 1. θ = 0; 2. θ = 0.2; 3. θ = 0.4; 4. θ = 0.6; 5. θ = 0.8; (Walukiewicz et al. [1980]). Solid line is mean observed values (Anderson et al. [1985]). |
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Hole Hall mobility versus temperature for different doping (Zn) levels. Hole concentration at 300 K: 1. 1.75·1018 cm-3; 2. 3.6·1017 cm-3; 3. 4.4·1016 cm-3. θ=Na/Nd~0.1. (Kohanyuk et al. [1988]). |
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Hole Hall mobility versus hole density, 300 K (Wiley [1975]). The approximate formula for hole Hall mobility: µp=µpo/[1 + (Na/2·1017)1/2], where µpo~150 cm2V-1 s-1, Na- in cm-3 |
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Field dependences of the electron drift velocity in InP, 300 K. Solid curve are theoretical calculation. Dashed and dotted curve are measured data. (Maloney and Frey [1977]) and (Gonzalez Sanchez et al. [1992]). |
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The field dependences of the electron drift velocity for high electric fields. T(K): 1. 95; 2. 300; 3. 400. (Windhorn et al. [1983]). |
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Field dependences of the electron drift velocity at different temperatures. Curve 1 -77 K (Gonzalez Sanchez et al. [1992]). Curve 2 - 300 K, Curve 3 - 500 K (Fawcett and Hill [1975]). |
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Electron temperature versus electric field for 77 K and 300 K. (Maloney and Frey [1977]) |
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Fraction of electrons in L and X valleys nL/no
and nX/no as a function of electric field, 300 K. (Borodovskii and Osadchii [1987]). |
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Frequency dependence of the efficiency η at first (solid line) and at the second (dashed line) harmonic in LSA mode. Monte Carlo simulation. F = Fo + F1·sin(2π·ft) + F2·[sin(4π·ft)+3π/2], Fo=F1=35 kV cm-1, F2=10.5 kV cm-1 (Borodovskii and Osadchii [1987]). |
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Longitudinal (D || F) and transverse (D ⊥ F) electron diffusion coefficients at 300 K. Ensemble Monte Carlo simulation. (Aishima and Fukushima [1983]). |
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Longitudinal (D || F) and transverse (D ⊥ F) electron diffusion coefficients at 77K. Ensemble Monte Carlo simulation. (Aishima and Fukushima [1983]). |
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The dependence of ionization rates for electrons αi
and holes βi versus 1/F, 300 K. (Cook et al. [1982]). |
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Breakdown voltage and breakdown field versus doping density for an abrupt p-n junction, 300 K (Kyuregyan and Yurkov [1989]). |
| Pure n-type material (no ~ 10-14cm-3) | |
The longest lifetime of holes |
τp ~ 3·10-6 s |
Diffusion length Lp = (Dp·τp)1/2 |
Lp ~ 40 µm. |
| Pure p-type material(po ~ 1015cm-3) | |
| (a)Low injection level | |
The longest lifetime of electrons |
τn ~ 2·10-9 s |
Diffusion length Ln = (Dn·τn)1/2 |
Ln ~ 8 µm |
| (b) High injection level (filled traps) | |
The longest lifetime of electrons |
τ ~ 10-8 s |
Diffusion length Ln |
Ln ~ 25 µm |
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Surface recombination velocity versus the heat of reaction per atom of each metal phosphide ΔHR (Rosenwaks et al. [1990]). |
| Radiative recombination coefficient (300 K) | 1.2·10-10 cm3/s |
| Auger coefficient (300 K) | ~9·10-31 cm6/s |
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