InP - Indium Phosphide

Optical properties

Infrared refractive index 3.1
Radiative recombination coefficient 1.2·10-10 cm3/s

Infrared refractive index

n = k1/2 = 3.075·(1+2.7·10-5T)

Long-wave TO phonon energy at 300 K hνTO = 38.1 meV
Long-wave LO phonon energy at 300 K hνLO = 42.6 meV
Refractive index n versus photon energy.
Solid curve is theoretical calculation.
Points represent experimental data, 300 K
(Adachi [1989]).
Normal incidence reflectivity versus photon energy, 300 K
(Aspnes and Studna [1983]).
Intrinsic absorption coefficient near the intrinsic absorption edge for different temperatures.
n-InP. no=5·1015 cm-3
(Turner et al. [1964]).
A ground state Rydberg energy RX1 = 5.0 meV.
Intrinsic absorption edge at 296 K at different doping levels
1. p-type sample, po = 1.1·1018 cm-3
3. n-type sample, no = 1.9·1018 cm-3
2. n-type sample, no = 7.4·1016 cm-3
4. n-type sample, no = 7·1018 cm-3
(Burkhard et al. 1982]).
Intrinsic absorption edge at 77 K for n-InP at different doping levels
1. no = 1019 cm-3;
2. no = 5·1018 cm-3;
3. no = 2·1018 cm-3;
4. no = 9.6·1016 cm-3
(Bugajski and Lewandowski [1985]).
The absorption coefficient versus photon energy, 300 K
(Aspnes and Studna [1983]).
Free carrier absorption versus photon energy ai different doping levels, 300 K.
Electron concentration no (cm-3): 1. 4·1016; 2. 2·1017; 3. 4·1017
(Newman [1958]).