Energy gap | 0.17 eV |
Energy separation (EΓL) between Γ and L valleys | 0.51 eV |
Energy separation (EΓX) between Γ and X valleys | 0.83 eV |
Energy spin-orbital splitting | 0.80 eV |
Intrinsic carrier concentration | 2·1016 cm-3 |
Intrinsic resistivity | 4·10-3 Ω·cm |
Effective conduction band density of states | 4.2·1016 cm-3 |
Effective valence band density of states | 7.3·1018 cm-3 |
Band structure and carrier concentration of InSb 300 K Eg = 0.17 eV EL = 0.68 eV EX= 1.0 eV Eso = 0.8 eV |
The temperature dependences of the intrinsic carrier concentration. | |
Fermi level versus temperature for different concentrations of shallow donors and acceptors. |
Electrons: | |
For Γ-valley | mΓ = 0.0.14mo |
Non-parabolicity: E(1+αE) = h2k2/(2mΓ) |
α = 4.1 (eV-1) |
In the L-valley effective mass of density of states | mL=0.25mo |
Electron effective mass versus electron concentration (Zawadzki [1974]). |
Holes: | mh = 0.43mo |
Heavy |
mh = 0.43mo |
Light |
mlp = 0.015mo |
Split-off band |
mso = 0.19mo |
Effective mass of density of states |
mv = 0.43mo |
Cd | Zn | Cr | Cu° | Cu- |
0.01 | 0.01 | 0.07 | 0.028 | 0.056 |