| Bulk modulus | 9.8·1011 dyn/cm2 |
| Melting point | 1412 °C |
| Specific heat | 0.7 J g-1°C-1 |
| Thermal conductivity | 1.3 W cm-1°C-1 |
| Thermal diffusivity | 0.8 cm2/s |
| Thermal expansion, linear | 2.6·10-6°C -1 |
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Temperature dependence of lattice parameter (Yim and Paff [1974]). |
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Temperature dependence of thermal conductivity for high purity Si. (Glassbrenner and Slack [1964]). |
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The dependence of thermal conductivity K versus doping level N at 20K. p-Si. (Thompson and Younglove [1961]). For T > 100 K thermal conductivity is practically independent of N. |
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Temperature dependence of specific heat at constant pressure. Tm is the melting point. (Okhotin et al. [1972]). |
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Temperature dependence of specific heat at low temperatures. (Flubacher et al. [1959]). |
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Temperature dependence of thermal diffusivity. (Shanks et al. [1963]). |
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Temperature dependence of linear expansion coefficient α. (Okada and Tokumaru [1984]). |
| for 850 °C | 2·10-9 |
| for 1100 °C | 2·10-5 |
| for 1300 °C | 5·10-3 |
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