3C-SiC: cubic unit cell (Zincblende) | Remarks | Referens | |
Energy gaps, Egind(Γ15v -X1c) | 2.416(1) eV | 2 K, wevelength modulated absorption | Bimberg et al.(1981) |
Energy gaps, Eg | 2.36 eV | 300 K | Goldberg et al.(2001) |
Energy gaps, Egdir(Γ15v -X1c) | 6.0 eV | 300 K, optical absorption | Dalven (1965) |
Excitonic Energy gaps, Egx | 2.38807(3) eV | 1.4 K, wevelength modulated absorption see also Temperature Dependences |
Gorban' et al.(1984) |
Conduction band | Remarks | Referens | |
Energy separation between Γ15v valley and L1c valleys EL | 4.6 eV | 300 K | Goldberg et al.(2001) |
Energy separation between Γ15v valley and Γ1c valleys EΓ | 6.0 eV | 300 K | |
Valence band | |||
Energy of spin-orbital splitting Eso | 0.01 eV | 300 K | Goldberg et al.(2001) |
Energy of crystal-field splitting Ecr |
--- | ||
Effective conduction band density of states |
1.5 x 1019cm-3 | 300 K | |
Effective valence band density of states |
1.2 x 1019 cm-3 | 300 K |
2H-SiC: Hexagonal unit cell (Wurtzite) | Remarks | Referens | |
Excitonic Energy gaps, Eg | 3.330 eV | optical absorption see also Temperature Dependences |
Patrick et al.(1966) |
4H-SiC: Hexagonal unit cell (Wurtzite) | Remarks | Referens | |
Energy gaps, Eg | 3.23 eV | 300 K | Goldberg et al.(2001) |
Excitonic Energy gaps, Egx | 3.20 eV | see also Temperature Dependences | Dubrovskii & Lepneva (1977) |
Conduction band | Remarks | Referens | |
Energy separation between Γ15v valley and L valleys EL | ~=4. eV | 300 K | Goldberg et al.(2001) |
Energy separation between Γ15v valley and Γ1c valleys EΓ | 5-6.0 eV | 300 K | |
Valence band | |||
Energy of spin-orbital splitting Eso | 0.007 eV | 300 K | Goldberg et al.(2001) |
Energy of crystal-field splitting Ecr |
0.008 eV | ||
Effective conduction band density of states |
1.7 x 1019cm-3 | 300 K | |
Effective valence band density of states |
2.5 x 1019 cm-3 | 300 K |
6H-SiC: Hexagonal unit cell (Wurtzite) | Remarks | Referens | |
Energy gaps, Eg | 3.0 eV | 300 K | Goldberg et al.(2001) |
Energy gaps, Egind | 2.86 eV | 300 K, optical absorption see also Temperature Dependences |
Philipp & Taft (1960) |
Excitonic Energy gaps, Eg | 3.0230 eV | wevelength modulated absorption see also Temperature Dependences |
Humphreys et al.(1981) |
Conduction band | Remarks | Referens | |
Energy separation between Γ15v valley and Γ1c valleys EΓ | 5-6.0 eV | 300 K | Goldberg et al.(2001) |
Valence band | |||
Energy of spin-orbital splitting Eso | 0.007 eV | 300 K | Goldberg et al.(2001) |
Energy of crystal-field splitting Ecr |
0.05 eV | ||
Effective conduction band density of states |
8.9 x 1019cm-3 | 300 K | |
Effective valence band density of states |
2.5 x 1019 cm-3 | 300 K |
8H-SiC: Hexagonal unit cell (Wurtzite) | Remarks | Referens | |
Excitonic Energy gaps, Eg | 2.86 eV | see also Temperature Dependences | Dubrovskii & Lepneva (1977) |
15R-SiC: Rhombohedral unit cell | Remarks | Referens | |
Excitonic Energy gaps, Eg | 2.9863 eV | wevelength modulated absorption see also Temperature Dependences |
Humphreys et al.(1981) |
21R-SiC: Rhombohedral unit cell | Remarks | Referens | |
Excitonic Energy gaps, Eg | 2.92 eV | see also Temperature Dependences | Dubrovskii & Lepneva (1977) |
24R-SiC: Rhombohedral unit cell | Remarks | Referens | |
Excitonic Energy gaps, Eg | 2.80 eV | see also Temperature Dependences | Dubrovskii & Lepneva (1977) |
SiC, 3C. Band structure. Important minima of the conduction
band and maxima of the valence band. . 300K; Eg = 2.36 eV; EΓ = 6.0 eV; EL = 4.6 eV; Eso = 0.01 eV. For details see Persson & Lindefelt (1997) |
|
SiC, 3C. Band structure Hemstreet & Fong (1974) |
|
SiC, 2H. Band structure Hemstreet & Fong (1974) |
|
SiC, 4H. Band structure. Important minima of the conduction band
and maxima of the valence band. . 300K; Eg = 3.23 eV; EΓ = 5-6.0 eV; EL ~= 4.0 eV; EsM ~= 0.1 eV. Ecr = 0.08 eV; Eso = 0.007 eV. For details see Persson & Lindefelt (1997) |
|
SiC, 4H. Band structure. Important minima of the conduction band
and maxima of the valence band. . 300K; Eg = 3.0 eV; EΓ = 5 - 6.0 eV; Ecr = 0.05 eV; Eso = 0.007 eV. For details see Persson & Lindefelt (1997) |
In all polytypcs except 3C- and riH-Sif atomic hiyers wilh cubic (C) and hexagonal (H) symmetry follow in a regular alternation in the direct ion of the c axis. This can be thought of as anutural one-dimensional superkmice imposed on the "pure" i.e. h-layer free 3C-SiC [Dean et al. (1977)], the period of the superlattice being different for different modifications.
Brillouin zone of the cubic lattice. | |
Brillouin zone of the hexagonal lattice. |
3C-SiC | Eg = Eg(0) - 6.0 x 10-4 x T2/(T + 1200) | (eV) | Goldberg et al.(2001) |
Egx = 3.024-0.3055x10-4 +T2/(311K - T) | (eV) | Ravindra & Srivastava (1979) | |
4H-SiC | Eg = Eg(0) - 6.5 x 10-4 x T2/(T + 1300) | Goldberg et al.(2001) | |
6H-SiC | Eg = Eg(0) - 6.5 x 10-4 x T2/(T + 1200) |
SiC, 3C, 4H, 6H. Energy gap vs. temperature. Choyke(1969) |
|
SiC, 3C, 15R, 21R, 2H, 4H, 6H, 8H. Excitonic energy gap vs. temperature
Choyke(1969) |
|
SiC, 4H. Excitonic energy gap vs. temperature Choyke et al.(1964) |
|
SiC, 6H. Energy gap Egind vs. temperature
Philipp & Taft(1960) |
|
SiC, 15R. Excitonic energy gap vs. temperature Patric et al. (1963) |
|
SiC, 24R. Excitonic energy gap vs. temperature Zanmarchi (1964) |
SiC, 3C, 4H, 6H. Intrinsic carrier concentration vs. temperature
Goldberg et al.(2001) |
Nc ~= 4.82 x 1015 · M · (mc/m0)3/2·T3/2
(cm-3) ~= 4.82 x 1015 (mcd/m0)3/2·x
T3/2 ~= 3 x 1015 x T3/2(cm-3)
,
where M=3 is the number of equivalent valleys in the conduction band.
mc = 0.35m0 is the
effective mass of the density of states in one valley of conduction band.
mcd = 0.72 is the effective mass of
density of states.
Nc ~= 4.82 x 1015 · M · (mc/m0)3/2·T3/2
(cm-3) ~= 4.82 x 1015 (mcd/m0)3/2·x
T3/2 ~= 1.73 x 1015 x T3/2(cm-3)
,
where M=6 is the number of equivalent valleys in the conduction band.
mc = 0.71m0 is the
effective mass of the density of states in one valley of conduction band.
mcd = 2.34 is the effective mass of density
of states.
3C-SiC | Nv = 2.23x1015 x T3/2 (cm-3) | Ruff et al. (1994), Casady and Johnson (1996) |
4H-SiC | Nv ~= 4.8x1015 x T3/2 (cm-3) | |
6H-SiC | Nv ~= 4.8x1015 x T3/2 (cm-3) |
3C-SiC | Eg = Eg(0) - 0.34 x 10-3P | (eV) | Park et al. (1994) |
EL = EL(0) + 3.92 x 10-3P | (eV) | ||
EΓ = EΓ(0) + 5.11 x 10-3P | (eV) | ||
4H-SiC | Eg = Eg(0) + 0.8 x 10-3P | (eV) | |
EΓ = EΓ(0) + 3.7 x 10-3P | (eV) | ||
6H-SiC | Eg = Eg(0) - 0.03 x 10-3P | (eV) | |
EΓ = EΓ(0) + 4.03 x 10-3P | (eV) |
3C-SiC. Conduction and valence band displacements vs. ionized shallow
impurity. n-type material. For comparison, the band-edge displacements for Si are shown Lindefelt (1998) |
|
3C-SiC. Conduction and valence band displacements vs. ionized shallow
impurity. p-type material. For comparison, the band-edge displacements for Si are shown Lindefelt (1998) |
|
4H-SiC, 6H-SiC. Conduction and valence band displacements vs. ionized
shallow impurity. n-type material. For comparison, the band-edge displacements for Si are shown Lindefelt (1998) |
|
4H-SiC, 6H-SiC. Conduction and valence band displacements vs. ionized
shallow impurity. p-type material. For comparison, the band-edge displacements for Si are shown Lindefelt (1998) |
The band-edge displacements for n-type material Lindefelt
(1998) :
ΔEnc=Anc(ND+)1/3
x 10-6 + Bnc(ND+)1/2
x 10-9 (eV)
ΔEnv=Anv(ND+)1/3
x 10-6 + Bnv(ND+)1/2
x 10-9 (eV)
where
n-type | Anc | Bnc | Anv | Bnv |
Si | -9.74x10-3 | -1.39x10-3 | -1.27x10-2 | -1.40x10-3 |
3C-SiC | -1.48x10-2 | -3.06x10-3 | -1.75x10-2 | -6.85x10-3 |
4C-SiC | -1.50x10-2 | -2.93x10-3 | -1.90x10-2 | -8.74x10-3 |
6C-SiC | -1.12x10-2 | -1.01x10-3 | -2.11x10-2 | -1.73x10-3 |
The band-edge displacements for p-type material Lindefelt
(1998) :
ΔEpc=Apc(ND+)1/3
x 10-6 + Bpc(ND+)1/2
x 10-9 (eV)
ΔEpv=Apv(ND+)1/3
x 10-6 + Bpv(ND+)1/2
x 10-9 (eV)
where
p-type | Apc | Bpc | Apv | Bpv |
Si | -1.14x10-3 | -2.05x10-3 | -1.11x10-2 | -2.06x10-3 |
3C-SiC | -1.50x10-2 | -6.41x10-4 | -1.30x10-2 | -1.43x10-3 |
4C-SiC | -1.57x10-2 | -3.87x10-4 | -1.30x10-2 | -1.15x10-3 |
6C-SiC | -1.74x10-2 | -6.64x10-4 | -1.30x10-2 | -1.14x10-3 |
3C-SiC | Remarks | Referens | |
Effective electron mass (longitudinal)ml |
0.68mo | Son et al.
(1994); Son et al. (1995) |
|
0.677(15)mo | 45K, Cyclotrone resonance | Kaplan et al. (1985) | |
Effective electron mass (transverse)mt |
0.25mo | Son et al. (1994); Son et al. (1995) |
|
0.247(11)mo | 45K, Cyclotrone resonance | Kaplan et al. (1985) | |
Effective mass of density of states mcd | 0.72mo | Son et al. (1994); Son et al. (1995) |
|
Effective mass of the density of states in one valley of conduction band mc | 0.35mo | ||
Effective mass of conductivity mcc | 0.32mo |
4H-SiC. The surfaces of equal energy are ellipsoids:
4H-SiC | Remarks | Referens | |
Effective electron mass (longitudinal)ml |
0.29mo | Son et al.
(1994); Son et al. (1995) |
|
Effective electron mass (transverse)mt |
0.42mo | Son et al. (1994); Son et al. (1995) |
|
Effective mass of density of states mcd | 0.77mo | Son et al. (1994); Son et al. (1995) |
|
Effective mass of the density of states in one valley of conduction band mc | 0.37mo | ||
Effective mass of conductivity mcc | 0.36mo |
6H-SiC. The surfaces of equal energy are ellipsoids:
6H-SiC | Remarks | Referens | |
Effective electron mass (longitudinal)ml |
0.20mo | Son et al. (1994); Son et al. (1995) | |
Effective electron mass (transverse)mt |
0.42mo | Son et al. (1994); Son et al. (1995) | |
Effective mass of density of states mcd | 2.34mo | Son et al. (1994); Son et al. (1995) | |
Effective mass of the density of states in one valley of conduction band mc | 0.71mo | ||
Effective mass of conductivity mcc | 0.57mo |
SiC | Remarks | Referens | ||
3C | Effective mass of density of state mv | 0.6 mo | 300 K | Son et al. (1994); Son et al. (1995) |
4H | Effective mass of density of state mv | ~1.0 mo | 300 K | |
6H | Effective mass of density of state mv | ~1.0 mo | 300 K |