SiC - Silicon Carbide

Transport Properties in High Electric Fields

Electron steady-state drift velocity

      Remarks Referens
Electron saturated drift velocity 4H-SiC Vsat = 8.0 x 106 cm/s 300 K, (E, c) = 8° towards <11-20> Vassilevski et al. (2000)
  4H-SiC Vsat = 7.5 x 106 cm/s 460K, (E,c) = 8° towards <11-20> Vassilevski et al. (2000)
  4H-SiC Vsat = 3.3 x 106 cm/s RT, E||c, saturation field = 1.55x105 V/cm,
n+-p-n+ SiC structures
Sankin et al. (2000)
  8H-SiC Vsat = 1.0 x 106 cm/s RT, E||c, saturation field = 1.35x105 V/cm
n+-p-n+ SiC structures
Sankin et al. (2000)
  15R-SiC Vsat = 1.2 x 106 cm/s RT, E||c, saturation field = 1.35x105 V/cm
n+-p-n+ SiC structures
Sankin et al. (2000)
  21R-SiC Vsat = 4.4 x 103 cm/s RT, E||c, saturation field = 1.35x105 V/cm
n+-p-n+ SiC structures
Sankin et al. (2000)
3C-SiC. Calculated electron steady-state drift velocity vs. electric field at 2 different temperatures T.
Total concentration of ionized dopants is 1.5x1018cm-3
1 - T = 300 K;
2 - T = 600 K.
Mickevicius & Zhao (1998)
4H-SiC. Calculated electron steady-state drift velocity vs. electric field
Doping concentration Nd = 1.5 x 1018 cm-3.
1 - T = 300 K; electric field E||c;
2 - T = 300 K, electric field Ec;
3 - T = 600 K, electric field E||c;
4 - T = 600 K, electric field Ec.
Mickevicius & Zhao (1998)
4H-SiC. Experimental electron steady state drift velocity vs. electric field
T = 300 K.
Electron concentration 1.4 x 1017 cm-3.
Mobility in the low electric field is 400 cm2/V·s.
Khan & Cooper (1998)
6H-SiC. Calculated electron steady-state drift velocity vs. electric field
Doping concentration Nd = 1.5 x 1018 cm-3.
1 - T = 300 K; electric field EcE||c;
2 - T = 300 K, electric field E||c;
3 - T = 600 K, electric field Ec;
4 - T = 600 K, electric field E||c.
Mickevicius & Zhao (1998)
6H-SiC. Experimental electron steady state drift velocity vs. electric field
T = 300 K.
Electron concentration 1.2 x 1017 cm-3.
Mobility in the low electric field is 200 cm2/V·s.
Khan & Cooper (1998)
6H-SiC. Experimental electron steady state drift velocity vs. electric field at two temperatures.
Solid lines are generated using the equation V(E) = µ E /[1+ ( µ E / Vsat )a ]1/a with parameters:
T = 23 K.   µ = 450 cm2/Vs,   Vsat= 2.2x107 cm/s,   a =1.2;
T = 320 K. µ = 130 cm2/Vs,   Vsat= 1.6x107 cm/s,   a =2.2.
Khan & Cooper (2000)
Contact authors: James A. Cooper. Also see High Field Transport.
6H-SiC. Experimental electron steady state drift velocity vs. electric field at two temperatures.
Solid lines are generated using the equation V(E) = µ E /[1+ ( µ E / Vsat )a ]1/a with parameters:
T = 23 K.   Mobility µ = 215 cm2/Vs,   Vsat= 1.9x107 cm/s,   a = 1.7;
T = 135 K. Mobility µ = 120 cm2/Vs,   Vsat= 1.4x107 cm/s,   a = 2.5;
T = 320 K. Mobility µ = 56 cm2/Vs,     Vsat= 1.0x107 cm/s,   a = 4.0.
Khan & Cooper (2000)
Contact authors: James A. Cooper. Also see High Field Transport.

Hole steady-state drift velocity

3C-SiC. Calculated Hole steady-state drift velocity vs. electric field applied along (100) direction (relatively low fields)
T = 300 K;
 Impurity concentration:
1 - 0.1 x 1018cm-3;
2 - 1.0 x 1018cm-3;
3 - 7.0 x 1018cm-3.
Bellotti et al. (1999)
3C-SiC. Calculated average Hole energy vs. electric field applied along (100) direction (relatively low fields).
T = 300 K.
 Bellotti et al. (1999)
3C-SiC. Calculated Hole steady-state drift velocity vs. electric field applied along (100) direction (high fields).
T = 300 K;
 Impurity concentration:
1 - 0.1 x 1018cm-3;
2 - 1.0 x 1018cm-3;
3 - 7.0 x 1018cm-3.
Bellotti et al. (1999)
3C-SiC. Calculated average Hole energy vs. electric field applied along (100) direction (high fields).
T = 300 K.
 Bellotti et al. (1999)