Remarks  Referens  
Electron ionization rates  α_{i} = α_{0} x exp(E_{i}
/E), where α_{0} = 4.57 x 10^{8} 1/cm, E_{i} = 5.24 x 10^{7} V/cm 
300 K  Kyuregyan & Yurkov (1989) 
Hole ionization rates  β_{i} = β_{0} x exp(E_{i}
/E), where β_{0} = 5.13 x 10^{6} 1/cm, E_{i} = 1.57 x 10^{7} V/cm 
300 K  Kyuregyan & Yurkov (1989) 
β_{i} = β_{0} x exp(E_{po}/E)
where β_{0} = 6.3 x 10^{6} 1.07 x 10^{4} T (1/cm),
E_{po} = 1.8 x 10^{7} (V/cm)
3CSiC. Calculated Hole ionization rates vs. inverse electric field. T = 300 K. Bellotti et al. (1999) 

4HSiC. Experimental Hole ionization rates vs. inverse electric field. T = 300 K. Raghunathan & Baliga (1999) 

6HSiC. Experimental Hole ionization rates vs. inverse electric field
at different temperatures:. T = 300 K; 340K; 380K; 400K; 450K. Raghunathan & Baliga (1999) 

4HSiC. Ionization rates for electrons & holes as a function of
inverse electric field. T = 300 K. Konstantinov et al. (1997) 

6HSiC. Electron (lines l'5') and Hole (lines 15) ionization
rates vs. inverse electric field at different temperatures. 1  1': T = 294 K; 2  2': T = 373 K; 3  3': T = 473 K; 4  4': T = 573 K; 5  5': T = 673 K. Konstantinov et al. (1989) 
Remarks  Referens  
Temperature coefficient of the breakdown voltage : 
4HSiC  b=1/V (dV/dT) = 2.6 x 10^{4} K^{1}  300573 K; V_{br}~270290 V; asymmetrical p^{+}n SiC structures 
Vasilevskii et al. (2000) 
4HSiC  b=1/V (dV/dT) = (810) x 10^{5} K^{1}  300573 K; V_{br}~22 V; symmetrical p^{+}n^{+} SiC structures 
Vasilevskii et al. (2003) 
4HSiC. Dependences of the breakdown voltage & breakdown field
vs. doping level abrupt p^{+}n functions T = 300 K. Konstantinov et al. (1997) 

4HSiC. Normalized Breakdown voltage vs. temperature for uniform
breakdown of abrupt p^{+}n. T = 300 K. Breakdown voltage : 1 452 V; 2  452 V. Konstantinov et al. (1998) 
6HSiC. Dependence of the breakdown voltage abrupt p^{+}n. T = 300 K; Kyuregyan & Yurkov (1989) 

6HSiC. Hole ionization rates vs. inverse electric field at two
temperatures for defective and defective free materials. T = 300 K; 450K. Raghunathan & Baliga (1999) 

6HSiC. Normalized breakdown voltage vs. temperature. Ec Konstantinov et al. (1998) 

6HSiC. Breakdown voltage temperature coefficient β = (d/dT)(ln
V_{i}) vs. temperature. Ec Anikin et al. (1988) 

6HSiC. Temperature coefficient of breakdown voltage vs. temperature. asymmetrical p^{+}n; V_{br}~ 80 V Vassilevski et al. (1993) 