v = aσ exp(-Ev/kT) m/s
3 x 10-3 m2s/kg; Ev=2.2 eV
Si (x=0); bulk
3 x 10-3 m2s/kg; Ev=1.6 eV
Ge (x=1); bulk
| Remarks | Referens | |||
| Dislocation glide velocity v = aσ exp(-Ev/kT) m/s | , where | a
3 x 10-3 m2s/kg; Ev=2.2 eV |
10 < σ < 100 MPa Si (x=0); bulk | Hull (1995) |
| a
3 x 10-3 m2s/kg; Ev=1.6 eV |
10 < σ < 100 MPa Ge (x=1); bulk |
To
define the glide velocities in strained Si1-xGex layers,
normalized glide velocity v* has been introduced:
v*= [vm
·exp(-0.6x/kT)]/σex
This equation
normalizes the measured glide velocities vm to an equivalent velocity
at an excess stress σex of 1 Pa in pure Si.
| Remarks | Referens | ||
| v*= exp(-[7.8 + b/kT]) | m2/kg |
uncapped SiGe; b = 2 eV: | Hull (1995) |
| v*= exp(-[10.4 + b/kT]) | m2/kg | Si-capped SiGe; b = 2 eV |
 |
Si1-xGex. Normalized dislocation velocities v* for
uncapped and capped (0.3 µn, Si) Si1-xGex/Si(001)
heterostructures vs. 1/kT Hull (1995) |
 |
Si1-xGex. Measured dislocation propagation velocities
vm in Si1-xGex/Si(001) heterostructures
vs. excess stress. 550 oC Hull (1995) |
|
|