Sergey Suturin, cand. phys.-math. sci.
Position: senior researcher
e-mail: : suturinjkkj jkjkjk@mail.ioffejkklkljlk.ru
Tel./fax: +7 812 2976411 (local 811)/ +7 812 297 1017
Postal address: Ioffe Institute, Ferroics Physics Laboratory, Politekhnicheskaya 26, 194021 St. Petersburg, Russia
Visiting address: Ioffe Institute, Politechnicheskaya 26, building "Microelectronics-A", room 321
Main research interests: Epitaxial growth of nanoscale systems by MBE and PLD, application of 3D reciprocal space mapping with electron and X-ray diffraction to the study of nanoscale systems, studying magnetic proximity effects by element specific synchrotron methods utilizing resonant soft X-ray techniques
Main publications:
- S.M. Suturin, N.S. Sokolov, J. Roy, J. Zegenhagen, "STM and LEED studies of CaF2 submonolayer coverage on Si(001)", Surface Science 605 (2011) 153–157S.
- M. Suturin, V. V. Fedorov, A. G. Banshchikov, D. A. Baranov, K. V. Koshmak, P. Torelli, J. Fujii, G. Panaccione, K. Amemiya, M. Sakamaki, T. Nakamura, M. Tabuchi, L. Pasquali and N. S. Sokolov, "Proximity effects and exchange bias in Co/MnF2 (111) heterostructures studied by X-ray magnetic circular dichroism", J. Phys.: Condens. Matter 25 (2013) 046002
- D.A. Baranov, B.B. Krichevtsov, S.V. Gastev, A.G. Banschikov, V.V. Fedorov, K.V. Koshmak, S.M. Suturin, N.S. Sokolov, "Magnetic anisotropy of cobalt nanoparticle 2D arrays grown on corrugated MnF2(110) and CaF2(110) surfaces", Appl. Surf. Sci., 267, (2013) 196-199
- N. S. Sokolov, S. M. Suturin, B. B. Krichevtsov, V. G. Dubrovskii, S. V. Gastev, N. V. Sibirev, D. A. Baranov, V. V. Fedorov, A. A. Sitnikova, A. V. Nashchekin, V. I. Sakharov, I. T. Serenkov, T. Shimada, T. Yanase and M. Tabuchi, "Cobalt epitaxial nanoparticles on CaF2/Si(111): Growth process, morphology, crystal structure, and magnetic properties", Phys. Rev. B 87, 125407 (2013)
- S. M. Suturin, V. V. Fedorov, A. M. Korovin, G. A. Valkovskiy, S. G. Konnikov, M. Tabuchi and N. S. Sokolov, "A look inside epitaxial cobalt-on-fluorite nanoparticles with three-dimensional reciprocal space mapping using GIXD, RHEED and GISAXS", J. Appl. Cryst. (2013). 46, 874–881