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Books and Book Chapters

• S.V. Ivanov, S.V. Sorokin, I.V. Sedova,
  Molecular beam epitaxy of wide-gap II-VI laser heterostructures,
  in: "Molecular Beam Epitaxy: From research to mass production", edited by M. Henini, 2^nd Edition, ©Elsevier Inc., 2018. p. 571-595.
• V. N. Jmerik, D. V. Nechaev and Sergey V. Ivanov,
  Kinetics of Metal-Rich PA Molecular Beam Epitaxy of AlGaN Heterostructures for Mid-UV Photonics,
  in: "Molecular Beam Epitaxy: From research to mass production", edited by M. Henini, 2^nd Edition, ©Elsevier Inc., 2018. p. 135-179.
• A.A. Toropov and T.V. Shubina,
  Plasmonic Effects in Metal-Semiconductor Nanostructures,
  in "Series on Semiconductor Science and Technology",
  ©OXFORD UNIVERSITY PRESS, ISBN: 978-0-19-969931-5, 369 p., 2015
• S.V. Ivanov, S.V. Sorokin, I.V. Sedova,
  Molecular beam epitaxy of wide-gap II-VI laser heterostructures,
  in: "Molecular Beam Epitaxy: From research to mass production", edited by M. Henini, ©Elsevier Inc., 2013. p. 611-630.
• T.V. Shubina, M.M. Glazov, N.A. Gippius, and B. Gil,
  The Slow Light in Gallium Nitride,
  in "III nitride Semiconductors and their modern devices", edited by B. Gil, ©OXFORD UNIVERSITY PRESS, 2013 (34 pages)
• I.I. Reshina, S.V. Ivanov,
  Magneto-Optical Study of Semimagnetic Single and Double Quantum Well Structures based on Cd(Mn)Se/CdMgSe Material System,
  Book Chapter 6 in "Quantum Wells: Theory, Fabrication and Applications", ©NOVA SCIENCE PUBLISHERS, 2009, pp. 215-248, ISBN: 978-1-60692-557-7.
• Valery Davydov, Albert Klochikhin, Sergey Ivanov, Jochen Aderhold and Akio Yamamoto,
  Growth and Properties of InN,
  Book Chapter 5 in "Nitride Semiconductors: Handbook on Materials and Devices", Eds.: P. Ruterana, M. Albrecht, J. Neugebauer, ©Wiley-VCH Verlag GmbH & Co. KGaA, 2006, pp. 241-294, ISBN: 9783527403875
• (in Russian) S.V. Ivanov, A.N. Semenov, V.S. Sorokin,
  "Molecular beam epitaxy as a basic technology for fabrication of III-V and II-VI semiconductor nanostructures",
  in "Nanotechnology: physics, processes, diagnostics, devices" edited by Lutshinin V.V., Tairov Yu.M., ©Published by: Moscow, PhysMathLit, 2006, pages 135-165.
• (in Russian) S.V. Ivanov, V.A. Solov´ev, S.V. Sorokin,
  "Semiconductor lasers for visible and mid-IR range based on the nanostructures with quantum dots",
  in "Nanotechnology: physics, processes, diagnostics, devices" edited by Lutshinin V.V., Tairov Yu.M., ©Published by: Moscow, PhysMathLit, 2006, pages 433-470.
• A.A. Toropov, O.G. Lyublinskaya, V.A. Solov´ev, S.V. Ivanov,
  "Sb-based nanostructures for mid-IR optoelectronics",
  in "III-V Semiconductor Heterostructures: Physics and Devices", edited by W.Z. Cai, ©(Published by Research Signpost), 2003, pp. 169-199.
• S.V. Ivanov and V.N. Jmerik,
  "InN growth by plasma-assisted molecular beam epitaxy",
  in "Nitrides as Seen by the Technology" edited by T. Paskova and B. Monemar ©(Published by Research Signpost), 2002, p. 369-400.
• S.V. Ivanov and P.S. Kop´ev,
  in "Antimonide-related strained-layer heterostructures"
  edited by M.O. Manasreh, Ser "Optoelectronic properties of semiconductors and superlattices" ©vol 3, (Gordon & Breach Science Publishers), 1997, p. 95.