Dr. Igor Rozhansky

Dr. Igor Rozhansky   Dr. Igor Rozhansky
  Senior researcher
  Ioffe Institute
  Politekhnicheskaya 26
  194021 St.Petersburg, Russia

  Игорь Владимирович Рожанский
  Доктор физико-математических наук
  phone:   +7 812 292 7155
  e-mail:   rozhansky@gmail.com

Research

  • Transport phenomena in semiconductors
  • Theory of spin-related and tunneling phenomena in nanostructures
  • Optical and transport effects in dilute magnetic semiconductors and heterostructures
  • Theory of inderect exchange interaction
  • Topological insulators and Weyl semimetals
   For the full list of publications, see Researher ID or Researh Gate.
   For the the list of recent preprints, see ArXiv.

Recent publications

  1. V. I. Safarov, I. V. Rozhansky, Z. Zhou, B. Xu, Z. Wei, Z.-G. Wang, Y. Lu, H. Jaffrès, H.-J. Drouhin,
    Recombination Time Mismatch and Spin Dependent Photocurrent at a Ferromagnetic-Metal–Semiconductor Tunnel Junction, Phys. Rev. Lett 128, 057701 (2022)
  2. Igor Rozhansky, Konstantin Denisov,
    Topological Hall effect, In Woodhead Publishing Series in Electronic and Optical Materials, Magnetic Skyrmions and Their Applications, pages 289-314 (2021), Ed.: G. Finocchio, C. Panagopoulos
  3. M. Raju, A. P. Petrović, A. Yagil, K. S. Denisov, N. K. Duong, B. Göbel, E. Şaşıoğlu, O. M. Auslaender, I. Mertig, I. V. Rozhansky & C. Panagopoulos,
    Colossal topological Hall effect at the transition between isolated and lattice-phase interfacial skyrmions, Nature Communications 12, 2758 (2021)
  4. I. V. Rozhansky, V. N. Mantsevich, N. S. Maslova, P. I. Arseyev, N. S. Averkiev, E. Lähderanta,
    Ultrafast electrical control of optical polarization in hybrid semiconductor structure, Physica E 132, 114755 (2021)
  5. M. A. Rakitskii, K. S. Denisov, I. V. Rozhansky, and N. S. Averkiev
    Fingerprints of the electron skew scattering on paramagnetic impurities in semiconductor systems, Appl. Phys. Lett. 118, 032105 (2021)
  6. I. V. Rozhansky, D. Quang To, H. Jaffres, and H.-J. Drouhin,
    Chirality-induced tunneling asymmetry at a semiconductor interface, Phys. Rev. B 102, 045428 (2020)
  7. L.A. Yung, K. S. Denisov, I. V. Rozhansky, N. S. Averkiev, E. Lähderanta,
    Chiral spin structure of electron gas in systems with magnetic skyrmions, J. Magn. Magn. Mater 506, 166755 (2020)
  8. I. V. Rozhansky, V. N. Mantsevich, N. S. Maslova, P. I. Arseyev, N. S. Averkiev, E. Lähderanta,
    Split-off states in tunnel-coupled semiconductor heterostructures for ultrafast modulation of spin and optical polarization, Phys. Rev. B 101, 045305 (2020)
  9. K. S. Denisov, I. V. Rozhansky, N. S. Averkiev, E. Lähderanta,
    Chiral spin ordering of electron gas in solids with broken time reversal symmetry, Scientific Reports 9, 10817 (2019)
  10. I. V. Rozhansky, K. S. Denisov, M. B. Lifshits, N. S. Averkiev, E. Lähderanta,
    Topological and Chiral Spin Hall Effects, Phys. Status Solidi B, 1900033 (2019)
  11. V. N. Mantsevich, I. V. Rozhansky, N. S. Maslova, P. I. Arseyev, N. S. Averkiev, E. Lähderanta,
    Mechanism of ultrafast spin-polarization switching in nanostructures, Phys. Rev. B 99, 115307 (2019)
  12. J. Nokelainen, I. V. Rozhansky, B. Barbiellini, E. Lähderanta, and K. Pussi,
    Gate-tunable magnetism of C adatoms on graphene, Phys. Rev. B 99, 035441 (2019)
  13. K. S. Denisov, I. V. Rozhansky, M. N. Potkina, I. S. Lobanov, E. Lähderanta, and V. M. Uzdin,
    Topological Hall effect for electron scattering on nanoscale skyrmions in external magnetic field, Phys. Rev. B 98, 214407 (2018)
  14. K. S. Denisov, I. V. Rozhansky, N. S. Averkiev, E. Lähderanta,
    General theory of the topological Hall effect in systems with chiral spin textures, Phys. Rev. B 98, 195439 (2018)
  15. N. S. Maslova, I. V. Rozhansky, V. N. Mantsevich, P. I. Arseyev, N. S. Averkiev, E. Lähderanta,
    Dynamic spin injection into a quantum well coupled to a spin-split bound state, Phys. Rev. B 97, 195445 (2018)
  16. K. S. Denisov, I. V. Rozhansky, N. S. Averkiev, E. Lähderanta,
    A nontrivial crossover in topological Hall effect regimes, Scientific Reports 7, 17204 (2017)
  17. K. S. Denisov, I. V. Rozhansky, N. S. Averkiev, E. Lähderanta,
    Spin-dependent tunneling recombination in heterostructures with a magnetic layer, Semiconductors 51, 43 (2017)
  18. K. S. Denisov, I. V. Rozhansky, N. S. Averkiev, E. Lähderanta,
    Electron Scattering on a Magnetic Skyrmion in the Nonadiabatic Approximation, Phys. Rev. Lett 117, 027202 (2016)
  19. I. V. Rozhansky, N. S. Averkiev, E. Lähderanta,
    Resonant tunneling between two-dimensional layers accounting for spin-orbit interaction, Phys. Rev. B 93, 195405 (2016)
  20. I. V. Rozhansky, I. V. Krainov, N. S. Averkiev, B. A. Aronzon, A. B. Davydov, K. I. Kugel, V. Tripathi, E. Lähderanta,
    Resonant indirect exchange via spatially separated two-dimensional channel, Appl. Phys. Lett. 106, 252402 (2016)
  21. L. N. Oveshnikov, V. A. Kulbachinskii, A. B. Davydov, B. A. Aronzon, I. V. Rozhansky, N. S. Averkiev, K. I. Kugel and V. Tripathi,
    Berry phase mechanism of the anomalous Hall effect in a disordered two-dimensional magnetic semiconductor structure, Scientific Reports 5, 17158 (2015)
  22. I. V. Rozhansky, V. Yu. Kachorovskii, and M. S. Shur,
    Helicity-Driven Ratchet Effect Enhanced by Plasmons, Phys. Rev. Lett. 114, 246601 (2015)
  23. Ya. V. Terent'ev, S. N. Danilov, H. Plank, J. Loher, D. Schuh, D. Bougeard, D. Weiss, M. V. Durnev, S. A. Tarasenko, I. V. Rozhansky, S. V. Ivanov, D. R. Yakovlev, S. D. Ganichev,
    Magnetooptical study of Zeeman effect in Mn modulation-doped InAs/InGaAs/InAlAs quantum well structures, J. Appl. Phys. 118, 113906 (2015)
  24. I. V. Rozhansky, K. S. Denisov, N. S. Averkiev, I. A. Akimov, E. Lähderanta,
    Spin-dependent tunneling in semiconductor heterostructures with a magnetic layer, Phys. Rev. B 92, 125428 (2015)
  25. I. V. Kraynov, I. V. Rozhansky, N. S. Averkiev, E. Lähderanta,
    Indirect exchange interaction between magnetic adatoms in graphene, Phys. Rev. B 92, 155432 (2015)