Dr. Igor Rozhansky

Dr. Igor Rozhansky   Dr. Igor Rozhansky
  Senior researcher
  Ioffe Institute
  Politekhnicheskaya 26
  194021 St.Petersburg, Russia

  Игорь Владимирович Рожанский
  Доктор физико-математических наук
  phone:   +7 812 292 7155
  e-mail:   rozhansky@gmail.com

Research

  • Transport phenomena in semiconductors
  • Theory of spin-related and tunneling phenomena in nanostructures
  • Optical and transport effects in dilute magnetic semiconductors and heterostructures
  • Theory of inderect exchange interaction
  • Topological insulators and Weyl semimetals
   For the full list of publications, see Researher ID or Researh Gate.
   For the the list of recent preprints, see ArXiv.

Recent publications

  • I. V. Rozhansky, K. S. Denisov, M. B. Lifshits, N. S. Averkiev, E. Lähderanta,
    Topological and Chiral Spin Hall Effects, Phys. Status Solidi B, 1900033 (2019)
  • V. N. Mantsevich, I. V. Rozhansky, N. S. Maslova, P. I. Arseyev, N. S. Averkiev, E. Lähderanta,
    Mechanism of ultrafast spin-polarization switching in nanostructures, Phys. Rev. B 99, 115307 (2019)
  • J. Nokelainen, I. V. Rozhansky, B. Barbiellini, E. Lähderanta, and K. Pussi,
    Gate-tunable magnetism of C adatoms on graphene, Phys. Rev. B 99, 035441 (2019)
  • K. S. Denisov, I. V. Rozhansky, M. N. Potkina, I. S. Lobanov, E. Lähderanta, and V. M. Uzdin,
    Topological Hall effect for electron scattering on nanoscale skyrmions in external magnetic field, Phys. Rev. B 98, 214407 (2018)
  • K. S. Denisov, I. V. Rozhansky, N. S. Averkiev, E. Lähderanta,
    General theory of the topological Hall effect in systems with chiral spin textures, Phys. Rev. B 98, 195439 (2018)
  • N. S. Maslova, I. V. Rozhansky, V. N. Mantsevich, P. I. Arseyev, N. S. Averkiev, E. Lähderanta,
    Dynamic spin injection into a quantum well coupled to a spin-split bound state, Phys. Rev. B 97, 195445 (2018)
  • K. S. Denisov, I. V. Rozhansky, N. S. Averkiev, E. Lähderanta,
    A nontrivial crossover in topological Hall effect regimes, Scientific Reports 7, 17204 (2017)
  • K. S. Denisov, I. V. Rozhansky, N. S. Averkiev, E. Lähderanta,
    Spin-dependent tunneling recombination in heterostructures with a magnetic layer, Semiconductors 51, 43 (2017)
  • K. S. Denisov, I. V. Rozhansky, N. S. Averkiev, E. Lähderanta,
    Electron Scattering on a Magnetic Skyrmion in the Nonadiabatic Approximation, Phys. Rev. Lett 117, 027202 (2016)
  • I. V. Rozhansky, N. S. Averkiev, E. Lähderanta,
    Resonant tunneling between two-dimensional layers accounting for spin-orbit interaction, Phys. Rev. B 93, 195405 (2016)
  • I. V. Rozhansky, I. V. Krainov, N. S. Averkiev, B. A. Aronzon, A. B. Davydov, K. I. Kugel, V. Tripathi, E. Lähderanta,
    Resonant indirect exchange via spatially separated two-dimensional channel, Appl. Phys. Lett. 106, 252402 (2016)
  • L. N. Oveshnikov, V. A. Kulbachinskii, A. B. Davydov, B. A. Aronzon, I. V. Rozhansky, N. S. Averkiev, K. I. Kugel and V. Tripathi,
    Berry phase mechanism of the anomalous Hall effect in a disordered two-dimensional magnetic semiconductor structure, Scientific Reports 5, 17158 (2015)
  • I. V. Rozhansky, V. Yu. Kachorovskii, and M. S. Shur,
    Helicity-Driven Ratchet Effect Enhanced by Plasmons, Phys. Rev. Lett. 114, 246601 (2015)
  • Ya. V. Terent'ev, S. N. Danilov, H. Plank, J. Loher, D. Schuh, D. Bougeard, D. Weiss, M. V. Durnev, S. A. Tarasenko, I. V. Rozhansky, S. V. Ivanov, D. R. Yakovlev, S. D. Ganichev,
    Magnetooptical study of Zeeman effect in Mn modulation-doped InAs/InGaAs/InAlAs quantum well structures, J. Appl. Phys. 118, 113906 (2015)
  • I. V. Rozhansky, K. S. Denisov, N. S. Averkiev, I. A. Akimov, E. Lähderanta,
    Spin-dependent tunneling in semiconductor heterostructures with a magnetic layer, Phys. Rev. B 92, 125428 (2015)
  • I. V. Kraynov, I. V. Rozhansky, N. S. Averkiev, E. Lähderanta,
    Indirect exchange interaction between magnetic adatoms in graphene, Phys. Rev. B 92, 155432 (2015)