|
Ga0.47In0.53As |
GaxIn1-xAs |
Remarks |
Referens |
Breakdown field |
≈ 2·105 V/cm |
≈(2÷4)·105 V/cm |
300 K |
Goldberg Yu.A. & N.M. Schmidt (1999) |
Mobility electrons |
<12·103 cm2 V-1s-1 |
(40-80.7x+49.2x2)·103 cm2
V-1s-1 |
300 K |
|
Mobility holes |
<300 cm2 V-1s-1 |
~300÷400 cm2 V-1s-1 |
300 K |
|
Diffusion coefficient electrons |
<300 cm2/s |
(10-20.2x+12.3x2)·102 cm2/s |
300 K |
|
Diffusion coefficient holes |
<7.5 cm2/s |
~7÷12 cm2/s |
300 K |
|
Electron thermal velocity |
5.5·105 m/s |
(7.7-5.9x+2.6x2)·105 m/s |
300 K |
|
Hole thermal velocity |
2·105m/s |
(1.8÷2)·105m/s |
300 K |
|
Surface recombination velocity |
|
<106 cm/s |
300 K |
|
Radiative recombination coefficient |
0.96·10-10 cm3/s |
|
300 K |
|
Auger coefficient |
7·10-29 cm6/s |
|
300 K |
|