GaInAs - Gallium Indium Arsenide

Optical properties


Ga0.47In0.53As     GaxIn1-xAs Remarks Referens
Dielectric constant (static) 13.9 15.1-2.87x+0.67x2 300 K
Dielectric constant (high frequency) 11.6 12.3-1.4x 300 K  
Infrared refractive index n 3.43 cm2 V-1s-1 (3.51-0.16x ) V-1s-1 300 K Goldberg Yu.A. & N.M. Schmidt (1999)
Radiative recombination coefficient 0.96 x 10-10 cm2/s  see Impact Ionization 300 K  
Optical phonon energy 34 meV  see Raman-active phonon modes 300 K  
         
Refractive index n versus alloy composition x at different photon energies
1 1.2 eV
2 0.9 eV
3 0.6 eV.
Takagi (1978)
Refractive index n versus photon energy for x=0.47. 300 K.
Adachi (1992)
Normal incidence reflectivityversus photon energy for x=0.47. 300 K.
Adachi (1992)
The absorption coefficient versus photon energy at different temperatures for x=0.47.
Electron concentration no=8·1014 cm-3.
Curves are shifted vertically for clarity.
Zielinski et al. (1986)
The absorption coefficient versus photon energy for x=0.47, 300 K.
Adachi (1992)
Free carrier absorption coefficient versus wavelength.
a - T=300 K, b - T=92 K.

1 x=0.08, Nd=1.4·1017 cm-3
2 x=0.1 Nd=5.4·1017 cm-3.
Aliev et al. (1987)

A ground state Rydberg energy Rx1=2.5 meV (for x=0.47).