| Ga0.47In0.53As | GaxIn1-xAs | Remarks | Referens | |
| Dielectric constant (static) | 13.9 | 15.1-2.87x+0.67x2 | 300 K | |
| Dielectric constant (high frequency) | 11.6 | 12.3-1.4x | 300 K | |
| Infrared refractive index n | 3.43 cm2 V-1s-1 | (3.51-0.16x ) V-1s-1 | 300 K | Goldberg Yu.A. & N.M. Schmidt (1999) |
| Radiative recombination coefficient | 0.96 x 10-10 cm2/s | see Impact Ionization | 300 K | |
| Optical phonon energy | 34 meV | see Raman-active phonon modes | 300 K | |
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Refractive index n versus alloy composition x at different photon energies 1 1.2 eV 2 0.9 eV 3 0.6 eV. Takagi (1978) |
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Refractive index n versus photon energy for x=0.47. 300 K. Adachi (1992) |
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Normal incidence reflectivityversus photon energy for x=0.47. 300 K. Adachi (1992) |
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The absorption coefficient versus photon energy at different temperatures for x=0.47. Electron concentration no=8·1014 cm-3. Curves are shifted vertically for clarity. Zielinski et al. (1986) |
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The absorption coefficient versus photon energy for x=0.47, 300 K. Adachi (1992) |
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Free carrier absorption coefficient versus wavelength. a - T=300 K, b - T=92 K. 1 x=0.08, Nd=1.4·1017 cm-3 2 x=0.1 Nd=5.4·1017 cm-3. Aliev et al. (1987) |
A ground state Rydberg energy Rx1=2.5 meV (for x=0.47).
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