GaInP - Gallium Indium Phosphide

Electrical properties

Basic Parameters
Mobility and Hall Effect
Two-dimensional electron and hole gas mobility at Ga0.51In0.49P/GaAs interface
Transport Properties in High Electric Fields
Impact Ionization
Recombination Parameters

Basic Parameters

Breakdown field ≈(5÷10) ·105 V/cm

Mobility and Hall Effect

Electron Hall mobility versus alloy composition x. T=300 K.
Electron concentration no=1017÷1.5·1018 cm-3.
(Macksey et al. (1973)).
Temperature dependence of electron mobility for x=0.5.
n=5·1016 cm-3
(Zhang et al. (1994)).
Electron Hall mobility versus electron concentration for x=0.52. T=300 K.
(Shitara and Eberi (1994)).
Hole Hall mobility versus temperature in Zn - doped GaxIn1-xP.
1 - x=0.65, Na=2.9·1017 cm-3, Nd/Na=0.26;
2 - x=0.32, Na=1.1·1018 cm-3, Nd/Na=0.18;
3 - x=0.70, Na=1.9·1018 cm-3, Nd/Na=0.07;
4 - x=0.75, Na=5.2·1018 cm-3, Nd/Na=0.086;
5 - x=0.36, Na=9.8·1017 cm-3, Nd/Na=0.18;
6 - x=0.55, Na=2.2·1018 cm-3, Nd/Na=0.091;
No significant dependence of the hole mobility on alloy composition is found.
(Kato et al. (1980)).
Hole Hall mobility versus hole concentration for Zn-doped Ga0.5In0.5P. T=300 K.
(Ikedo and Kaneko(1989)).
Hole Hall concentration (squares) and mobility (circles) for Mg - doped Ga0.5In0.5P as a function of Mg mole fraction in the growth solution. T=300 K.
(Chang et al. (1988)).

Two-dimensional electron and hole gas mobility at at Ga0.51In0.49P/GaAs interface

T=77 K µn=21300 cm2/Vs (Sheet concentration N=1.26·1012 cm-2)
T=300 K µn=3500 cm2/Vs N=1.89·1012 cm-2

Transport Properties in High Electric Fields

Field dependence of the electron drift velocity in Ga0.52In0.48P. T=300 K.
Monte-Carlo calculations.
(Brennan and Chiang (1992)).
Field dependence of the hole drift velocity in Ga0.52In0.48P. T=300 K.
Monte-Carlo calculations.
(Brennan and Chiang (1992)).

Impact Ionization

The dependences of ionization rates for electrons αi and holes &betai versus 1/F for x=0 (InP). T=300 K.
(Cook et al. (1982))..
Breakdown voltage and breakdown field versus doping density for an abrupt p-n junction. x=0 (InP). T=300 K.
(Kyuregyan and Yurkov (1989)).
The dependences of ionization rates = αi versus 1/F for x=1 (GaP). T=300 K.
(Chau and Pavlidis (1992)).
Breakdown voltage and breakdown field versus doping density for abrupt p-n junction. x=1 (GaP). T=300 K.
(Sze and Gibbons (1966)).

Recombination Parameter

Radiative recombination coefficient

x=0 T=300 K 1.2·10-10(cm3/s)
x=0.5 T=300 K (1.0±0.3)·10-10(cm3/s)
x=0.5 T=150 K (4.0±1)·10-10(cm3/s)
x=1 T=300 K ~10-13(cm3/s)

Auger coefficient at T=300 K.

x=0 ~9·10-31 (cm6/s)
x=0.5 ~3·10-30 (cm6/s)
x=1 ~1·10-30 (cm6/s)

Surface recombination velocity (x=0.5, 300K).

free surface ~(2÷5)·104 (cm/s) Pearton et al. (1994))
GaInP/GaAs 1.5 (cm/s) (Olson et al. (1989))
GaInP/(Al0.7Ga0.3)0.5In0.5P 20 (cm/s) (undoped n-AlGaInP) (Domen et al. (1992))
GaInP/(Al0.7Ga0.3)0.5In0.5P 100 (cm/s) (AlGaInP with
no=2.5·1017 cm-3)		 (Domen et al. (1992))