Localization of non-equilibrium carriers in deep InGaN quantum dots and its impact on the device performance
2006
, Phys. Status Solidi C Curr. Top. Solid State Phys., v.3
6th International Conference on Nitride Semiconductors (ICNS-6) Location: Bremen, GERMANY Date: AUG 28-SEP 02, 2005
ISSN: 1862-6351
Страницы:
2043 - 2047
Авторы:Sizov,DS; Sizov,VS; Lundin,VV; Zavarin,EE; Tsatsul`nikov,AF; Vlasov,AS; Musikhin,YuG; Ledentsov,NN; Mintairov,AM; Sun,K; Merz,J
Авторы (ФТИ):Sizov,DS; Sizov,VS; Lundin,VV; Zavarin,EE; Tsatsul`nikov,AF; Vlasov,AS; Ledentsov,NN; Mintairov,AM
Подразделения:
DOI:http://dx.doi.org/10.1002/pssc.200565465
Scopus® times cited:0
Scopus® ID:2-s2.0-33746357265
Web of Science® times cited:0
Web of Science® ID:WOS:000239543600156
Полный текст:http://dx.doi.org/10.1002/pssc.200565465