Investigations of InGaN/GaN and InGaN/InGaN QDs grown in a wide pressure MOCVD reactor
2007
, Int. J. Nanoscience, v.6, 5
3rd International Conference on Materials for Advanced Technologies (ICMAT-2005)/9th International Conference on Advanced Materials (ICAM 2005) Location: Singapore, SINGAPORE Date: JUL 03-08, 2005
ISSN: 0219-581X
Страницы:
327 - 332
Авторы:Sizov,DS; Sizov,VS; Lundin,VV; Zavarin,EE; Tsatsul`nikov,AF; Musikhin,YuG; Vlasov,AS; Ledentsov,NN; Mintairov,AM; Sun,K; Merz,J
Авторы (ФТИ):Sizov,DS; Sizov,VS; Lundin,VV; Zavarin,EE; Tsatsul`nikov,AF; Musikhin,YuG; Vlasov,AS; Ledentsov,NN; Mintairov,AM
Подразделения:
DOI:http://dx.doi.org/10.1142/S0219581X07004882
Scopus® times cited:0
Scopus® ID:2-s2.0-36649024757
Web of Science® times cited:0
Web of Science® ID:WOS:000255632800006
Полный текст:http://dx.doi.org/10.1142/S0219581X07004882