Creation of Two-Component Electron-Hole Plasma in Nanometer-Sized GaAs layers Embedded by Self-Assembled InAs Quantum Dots
2001
10th International Conference on Narrow Gap Semiconductors and Related Small Energy Phenomena, Physics and Applications, May 27-31, 2001, Ishikawa, Japan
ISBN: 4-900526-14-2

В книге (сборнике): PROCEEDINGS OF THE 10TH INTERNATIONAL CONFERENCE ON NARROW GAP SEMICONDUCTORS AND RELATED SMALL ENERGY PHENOMENA, PHYSICS AND APPLICATIONS. IPAP CONFERENCE SERIES Страницы: 171 - 173
Авторы:Bairamov,BH; Voitenko,VA; Toporov,VV; Bairamov,FB; Zakharchenya,BP; Henini,M; Kent,AJ
Авторы (ФТИ):Bairamov,BH; Toporov,VV; Bairamov,FB; Zakharchenya,BP Web of Science® times cited:1 Web of Science® ID:WOS:000178110700051
Полный текст:http://www.ipap.jp/proc/cs2/pdf/cs2_051f.pdf