Photoluminescence from triplet states of isoelectronic bound excitons at interstitial carbon-intersititial oxygen defects in silicon
2009 , Physica B, v.404, 23-24
ISSN: 0921-4526

Страницы: 4552 - 4554
Авторы:Ishikawa,T; Koga,K; Itahashi,T; Vlasenko,LS; Itoh,KM
Авторы (ФТИ):Vlasenko,LS DOI:http://dx.doi.org/10.1016/j.physb.2009.08.316 Scopus® times cited:2 Scopus® ID:2-s2.0-74349091888 Web of Science® times cited:2 Web of Science® ID:WOS:000276029300014
Полный текст:http://dx.doi.org/10.1016/j.physb.2009.08.316