Dual optical marker Raman characterization of strained GaN-channels on AlN using AlN/GaN/AlN quantum wells and N-15 isotopes
2015
, Appl. Phys. Lett., v.106, 4
ISSN: 0003-6951
Номер статьи:
#041906
Авторы:Qi,M; Li,GW; Protasenko,V; Zhao,P; Verma,J; Song,B; Ganguly,S; Zhu,MD; Hu,ZY; Yan,XD; Mintairov,AM; Xing,HG; Jena,D
Авторы (ФТИ):Mintairov,AM
DOI:http://dx.doi.org/10.1063/1.4906900
Scopus® times cited:10
Scopus® ID:2-s2.0-84923873306
Web of Science® times cited:8
Web of Science® ID:WOS:000348996200030
Полный текст:http://dx.doi.org/10.1063/1.4906900